Apparatus for detection of thin films during chemical/mechanical polishing planarization
First Claim
1. An apparatus for chemical mechanical polishing of a wafer, comprising:
- a platen to support a polishing pad having a polishing surface;
a chuck to hold the wafer against the polishing surface;
a motor coupled to the platen to move the platen to generate relative motion between the polishing surface and the wafer; and
an endpoint detector, comprisinga light source positioned and operable to generate a light beam that is directed through the polishing pad to the wafer and produce, from the light beam that is directed through the polishing pad, a light beam reflected from the wafer, anda receiver positioned and operable to receive the light beam reflected from the wafer directed through the polishing pad, wherein the endpoint detector is operable to determine, based on the light beam reflected from the wafer, when an end point is reached.
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Abstract
A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.
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Citations
7 Claims
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1. An apparatus for chemical mechanical polishing of a wafer, comprising:
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a platen to support a polishing pad having a polishing surface; a chuck to hold the wafer against the polishing surface; a motor coupled to the platen to move the platen to generate relative motion between the polishing surface and the wafer; and an endpoint detector, comprising a light source positioned and operable to generate a light beam that is directed through the polishing pad to the wafer and produce, from the light beam that is directed through the polishing pad, a light beam reflected from the wafer, and a receiver positioned and operable to receive the light beam reflected from the wafer directed through the polishing pad, wherein the endpoint detector is operable to determine, based on the light beam reflected from the wafer, when an end point is reached. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification