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Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction

  • US 7,582,519 B2
  • Filed: 07/14/2006
  • Issued: 09/01/2009
  • Est. Priority Date: 11/05/2002
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor structure, comprising:

  • forming a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween;

    forming a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions;

    forming an insulating layer in the first trench; and

    forming at least one diode in the first trench, the at least one diode being at least partially insulated from at least one of the P-type and N-type regions by the insulating layer, wherein no current flows through the first trench when the semiconductor structure is biased in a conducting state, and wherein the at least one diode influences an electric field in at least one of the P-type and N-type regions to thereby increase the blocking voltage of the semiconductor structure.

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