Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same
First Claim
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1. A method of removing contaminates from a structure of a semiconductor device, wherein said structure comprises a metal, said method comprising:
- cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water;
cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O3) water or hydrogen fluoride (HF); and
forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution, wherein the reoxidizing is carried out by using plasma,whereby contaminants are removed from said structure of said semiconductor device.
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Abstract
The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water, and a second cleaning solution including ozone (O3) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.
14 Citations
18 Claims
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1. A method of removing contaminates from a structure of a semiconductor device, wherein said structure comprises a metal, said method comprising:
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cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water; cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O3) water or hydrogen fluoride (HF); and forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution, wherein the reoxidizing is carried out by using plasma, whereby contaminants are removed from said structure of said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device, comprising:
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forming an insulation layer and a conductive layer on a semiconductor substrate; forming a gate pattern, said gate pattern comprising a metal, by sequentially etching the conductive layer and the insulation layer, the gate pattern comprising an insulation layer pattern and a conductive layer pattern; cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water; cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O3) water or hydrogen fluoride (HF); and forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution, wherein the reoxidizing is carried out by using plasma, to thereby manufacture said semiconductor device. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification