Method for forming insulation film

• US 7,582,575 B2
• Filed: 12/05/2005
• Issued: 09/01/2009
• Est. Priority Date: 02/05/1998
• Status: Expired due to Term

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Fukazawa, Atsuki, Kagami, Kenichi
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/294,319
• Publication Number:
  US 20060110931A1
• Time in Patent Office: 1,366 Days
• Field of Search: 438787-790, 427/489, 427/495, 427/515, 427/535, 427/539
• US Class Current: 438/787
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

Claims

1. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O, and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein said silicon-containing hydrocarbon compound has the formula Si_α

O<sub>α

−

1</sub>R<sub>2α

−

β

+2</sub>(OR′

)_β

wherein α

is an integer of 1-3, β

is 0, 1, or 2, R is C_1-6 hydrocarbon attached to Si, and R′

is C_1-6 hydrocarbon unattached to Si, wherein R′

is C_nH_2n+1 wherein n is an integer of 1-3,

wherein the semiconductor substrate has a via and/or trench wherein the insulation film is formed on a surface of the via and/or trench.

2. The method according to claim 1, wherein said silicon-containing hydrocarbon compound includes a reactive group selected from the group consisting of alkoxy group, vinyl group, amino group, and acid radical.

3. The method according to claim 1, wherein the film has a dielectric constant of 3.3 or less.

4. The method according to claim 1, wherein the carrier gas is selected from the group consisting of He, Ar, Kr, and Xe.

5. The method according to claim 1, further comprising introducing an additive gas selected from the group consisting of an oxidizing gas, CO₂, H₂, and CxHyOz wherein x=1-5, y=2x or 2x+2, and z=0 or 1, into the reaction space when the source gas is introduced.

6. The method according to claim 5 , wherein the additive gas is introduced at a flow rate of 10 sccm to 100 sccm.

7. The method according to claim 1, wherein the low-frequency RF power is 1%-50% of the high-frequency RF power.

8. The method according to claim 1, wherein the low-frequency RF power has a frequency of 2 MHz or less.

9. The method according to claim 1, wherein the high-frequency RF power has a frequency selected from the group consisting of 13.56 MHz, 27 MHz, and 60 MHz.

10. The method according to claim 1, wherein the average temperature of the reaction (Tr) is in a range of 323K to 823K.

11. The method according to claim 1, wherein the insulation film has a density of more than 1.3 g/cm³.

12. The method according to claim 1, wherein the space between the semiconductor substrate and the upper electrode (d) is less than 0.014 m.

13. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O, and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the high-frequency RF power is at a higher frequency than the low-frequency RF power, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein the carrier gas is selected from the group consisting of He, Ar, Kr, and Xe, wherein the carrier gas is introduced at a flow rate of 10 sccm to 100 sccm,

wherein the semiconductor substrate has a via and/or trench wherein the insulation film is formed on a surface of the via and/or trench.

14. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O, and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the high-frequency RF power is at a higher frequency than the low-frequency RF power, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein the insulation film is a silicon carbide film doped with oxygen.

15. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O, and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the high-frequency RF power is at a higher frequency than the low-frequency RF power, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein the insulation film is composed further of N.

16. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O , and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the high-frequency RF power is at a higher frequency than the low-frequency RF power, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein the insulation film is a barrier film for blocking Cu-diffusion.

17. The method according to claim 16, wherein the barrier film has a thickness of 25 nm to 70 nm.

18. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas without a separate oxygen-supplying gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, C, O, and H on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the high-frequency RF power is at a higher frequency than the low-frequency RF power, wherein the plasma reaction is activated while controlling a flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]=9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the semiconductor substrate (m)

d;

space between the semiconductor substrate and an upper electrode (m) of the reaction space,

F;

total flow volume of the reaction gas (sccm),

wherein the semiconductor substrate has an exposed Cu layer on which the insulation film is to be formed.