×

High performance device design

  • US 7,582,947 B2
  • Filed: 10/05/2005
  • Issued: 09/01/2009
  • Est. Priority Date: 10/05/2005
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure comprising:

  • a semiconductor substrate;

    a first and a second isolation region disposed in the substrate and defining a first active region in the semiconductor substrate therebetween, wherein the first and second isolation region have sidewalls with a tilt angle of substantially less than about 90 degrees;

    a gate dielectric in the first active region and over the semiconductor substrate;

    a gate electrode over the gate dielectric;

    a source/drain region substantially aligned with a sidewall of the gate electrode;

    a second active region in the semiconductor substrate, wherein the second active region has a top surface higher than a top surface of the first active region by a height difference of at least about 100 Å

    ;

    an additional gate dielectric in the second active region and over the semiconductor substrate;

    an additional gate electrode over the additional gate dielectric; and

    an additional source/drain region substantially aligned with a sidewall of the additional gate electrode.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×