Semiconductor chip having gettering layer, and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip;
a package substrate which faces the back face; and
a resin covering the semiconductor chip and the package substrate,wherein a thickness of said semiconductor chip is 100 μ
m or less,wherein said gettering layer is a damaged layer,wherein the damaged layer includes a plurality of grooves,wherein a depth of each of said grooves is 2 to 3 μ
m, andwherein in plan view to said semiconductor chip, each of said grooves is a linear groove.
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Abstract
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
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Citations
2 Claims
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1. A semiconductor device comprising:
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a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip; a package substrate which faces the back face; and a resin covering the semiconductor chip and the package substrate, wherein a thickness of said semiconductor chip is 100 μ
m or less,wherein said gettering layer is a damaged layer, wherein the damaged layer includes a plurality of grooves, wherein a depth of each of said grooves is 2 to 3 μ
m, andwherein in plan view to said semiconductor chip, each of said grooves is a linear groove.
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2. A semiconductor device comprising:
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a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip; a substrate which faces the back face; a wire; and a resin covering the semiconductor chip, the wire and the package substrate, wherein a thickness of said semiconductor chip is 100 μ
m or less,wherein said gettering layer is a damaged layer, wherein the damaged layer includes a plurality of grooves, wherein a depth of each of said grooves is 2 to 3 μ
m, andwherein in plan view to said semiconductor chip, each of said grooves is a linear groove, and wherein the wire electrically connects between the substrate and the semiconductor chip.
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Specification