Semiconductor device

• US 7,583,250 B2
• Filed: 03/08/2004
• Issued: 09/01/2009
• Est. Priority Date: 03/12/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Saito, Toshihiko, Kato, Kiyoshi
• Primary Examiner(s): Shankar; Vijay
• Application Number:
  US10/793,822
• Publication Number:
  US 20040178434A1
• Time in Patent Office: 2,003 Days
• Field of Search: 345 87-104, 345204-215
• US Class Current: 345/104
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0445 using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
• CPC Class Codes: G06F 3/0447 Position sensing using the local deformation of sensor cells
• CPC Class Codes: G09G 3/36 using liquid crystals
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 : with multiple gate
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays

Abstract

A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.

Claims

1. A semiconductor device comprising:

an insulating substrate;

a variable capacitor including a pair of electrodes and a dielectric, which is formed over the insulating substrate; and

a display device over the insulating substrate,

wherein a capacitance of the variable capacitor is changed corresponding to a distance between the pair of the electrodes, and

wherein the semiconductor device includes a means for converting change of capacitance of the variable capacitor into an electrical signal.

5. A semiconductor device according to claim 1, wherein the dielectric is transformed under external pressure.

9. A semiconductor device according to claim 1, wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.

13. A semiconductor device according to claim 1, wherein the dielectric is surrounded by the pair of electrodes and a sealant.

17. A semiconductor device according to claim 1, wherein the dielectric is liquid crystal that is used in the display device.

21. A semiconductor device according to claim 1, wherein the insulating substrate comprises glass.

25. A semiconductor device according to claim 1, wherein the insulating substrate comprises plastic.

29. A semiconductor device according to claim 21, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising glass.

33. A semiconductor device according to claim 25, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising plastic.

37. A semiconductor device according to claim 1, wherein the variable capacitor is arranged in a line.

41. A semiconductor device according to claim 1, wherein the variable capacitor is arranged in a grid.

45. A semiconductor device according to claim 1, wherein the variable capacitor is arranged in a random order.

49. A semiconductor device according to claim 1, wherein change of capacitance of the variable capacitor is generated by applying physical force.

53. A semiconductor device according to claim 1, wherein change of capacitance of the variable capacitor is generated by using an electrical signal.

57. A semiconductor device according to claim 1, wherein the semiconductor device is one selected from a group consisting of a game machine, a video camera, a head-mounted display, a DVD player, a personal computer, a cellular phone, a car audio, and a card viewer.

61. A semiconductor device according to claim 1, wherein one of the pair of electrodes is a transparent electrode.

2. A semiconductor device comprising:

an insulating substrate;

a plurality of variable capacitors each including a pair of electrodes and a dielectric, which are formed over the insulating substrate; and

a display device over the insulating substrate,

wherein a capacitance of the variable capacitor is changed corresponding to a distance between the pair of the electrodes, and

wherein the semiconductor device includes a means for converting change of capacitance of each variable capacitor into an electrical signal.

6. A semiconductor device according to claim 2, wherein the dielectric is transformed under external pressure.

10. A semiconductor device according to claim 2, wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.

14. A semiconductor device according to claim 2, wherein the dielectric is surrounded by the pair of electrodes and a sealant.

18. A semiconductor device according to claim 2, wherein the dielectric is liquid crystal that is used in the display device.

22. A semiconductor device according to claim 2, wherein the insulating substrate comprises glass.

26. A semiconductor device according to claim 2, wherein the insulating substrate comprises plastic.

30. A semiconductor device according to claim 22, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising glass.

34. A semiconductor device according to claim 26, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising plastic.

38. A semiconductor device according to claim 2, wherein the variable capacitor is arranged in a line.

42. A semiconductor device according to claim 2, wherein the variable capacitor is arranged in a grid.

46. A semiconductor device according to claim 2, wherein the variable capacitor is arranged in a random order.

50. A semiconductor device according to claim 2, wherein change of capacitance of the variable capacitor is generated by applying physical force.

54. A semiconductor device according to claim 2, wherein change of capacitance of the variable capacitor is generated by using an electrical signal.

58. A semiconductor device according to claim 2, wherein the semiconductor device is one selected from a group consisting of a game machine, a video camera, a head-mounted display, a DVD player, a personal computer, a cellular phone, a car audio, and a card viewer.

62. A semiconductor device according to claim 2, wherein one of the pair of electrodes is a transparent electrode.

3. A semiconductor device comprising:

an insulating substrate;

a variable capacitor including a pair of electrodes and a dielectric interposed therebetween, wherein a capacitance of the variable capacitor is changed corresponding to a distance between the pair of the electrodes;

a read-out circuit that detects change of capacitance of the variable capacitor; and

a display device,

wherein the variable capacitor, the read-out circuit, and the display device are provided over the insulating substrate.

7. A semiconductor device according to claim 3, wherein the dielectric is transformed under external pressure.

11. A semiconductor device according to claim 3, wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.

15. A semiconductor device according to claim 3, wherein the dielectric is surrounded by the pair of electrodes and a sealant.

19. A semiconductor device according to claim 3, wherein the dielectric is liquid crystal that is used in the display device.

23. A semiconductor device according to claim 3, wherein the insulating substrate comprises glass.

27. A semiconductor device according to claim 3, wherein the insulating substrate comprises plastic.

31. A semiconductor device according to claim 23, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising glass.

35. A semiconductor device according to claim 27, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising plastic.

39. A semiconductor device according to claim 3, wherein the variable capacitor is arranged in a line.

43. A semiconductor device according to claim 3, wherein the variable capacitor is arranged in a grid.

47. A semiconductor device according to claim 3, wherein the variable capacitor is arranged in a random order.

51. A semiconductor device according to claim 3, wherein change of capacitance of the variable capacitor is generated by applying physical force.

55. A semiconductor device according to claim 3, wherein change of capacitance of the variable capacitor is generated by using an electrical signal.

59. A semiconductor device according to claim 3, wherein the semiconductor device is one selected from a group consisting of a game machine, a video camera, a head-mounted display, a DVD player, a personal computer, a cellular phone, a car audio, and a card viewer.

63. A semiconductor device according to claim 3, wherein one of the pair of electrodes is a transparent electrode.

4. A semiconductor device comprising:

an insulating substrate;

a plurality of variable capacitors each including a pair of electrodes and a dielectric interposed therebetween, wherein a capacitance of the variable capacitor is changed corresponding to a distance between the pair of the electrodes;

a read-out circuit that detects change of capacitance of each variable capacitor; and

a display device,

wherein the variable capacitors, the read-out circuit, and the display device are provided over the insulating substrate.

8. A semiconductor device according to claim 4, wherein the dielectric is transformed under external pressure.

12. A semiconductor device according to claim 4, wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.

16. A semiconductor device according to claim 4, wherein the dielectric is surrounded by the pair of electrodes and a sealant.

20. A semiconductor device according to claim 4, wherein the dielectric is liquid crystal that is used in the display device.

24. A semiconductor device according to claim 4, wherein the insulating substrate comprises glass.

28. A semiconductor device according to claim 4, wherein the insulating substrate comprises plastic.

32. A semiconductor device according to claim 24, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising glass.

36. A semiconductor device according to claim 28, wherein at least one of the pair of the electrodes is formed over the insulating substrate comprising plastic.

40. A semiconductor device according to claim 4, wherein the variable capacitor is arranged in a line.

44. A semiconductor device according to claim 4, wherein the variable capacitor is arranged in a grid.

48. A semiconductor device according to claim 4, wherein the variable capacitor is arranged in a random order.

52. A semiconductor device according to claim 4, wherein change of capacitance of the variable capacitor is generated by applying physical force.

56. A semiconductor device according to claim 4, wherein change of capacitance of the variable capacitor is generated by using an electrical signal.

60. A semiconductor device according to claim 4, wherein the semiconductor device is one selected from a group consisting of a game machine, a video camera, a head-mounted display, a DVD player, a personal computer, a cellular phone, a car audio, and a card viewer.

64. A semiconductor device according to claim 4, wherein one of the pair of electrodes is a transparent electrode.