Pressure sensor for measuring blood pressure and method of fabricating the same
First Claim
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1. A pressure sensor for measuring blood pressure, comprising:
- at least one cantilever formed on an upper surface of a silicon substrate;
a piezoresistor formed on a fixed end of the cantilever; and
a metal wire and an electrode pad connected to both ends of the piezoresistor,wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever,wherein the cantilever comprises a plurality of cantilevers, and the plurality of cantilevers are parallel to each other, andwherein the plurality of cantilevers are formed on the silicon substrate so that each cantilever extends in an opposite direction with respect to an adjacent cantilever.
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Abstract
A pressure sensor includes at least one cantilever formed on an upper surface of a silicon substrate, a piezoresistor formed on a fixed end of the cantilever, and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever.
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Citations
16 Claims
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1. A pressure sensor for measuring blood pressure, comprising:
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at least one cantilever formed on an upper surface of a silicon substrate; a piezoresistor formed on a fixed end of the cantilever; and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever, wherein the cantilever comprises a plurality of cantilevers, and the plurality of cantilevers are parallel to each other, and wherein the plurality of cantilevers are formed on the silicon substrate so that each cantilever extends in an opposite direction with respect to an adjacent cantilever. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a pressure sensor, comprising:
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(a) forming a piezoresistor on a fixed end of cantilever forming region on an upper surface of a silicon substrate; (b) forming a wire and an electrode pad connected to both ends of the piezoresistor; (c) forming an insulating layer on the silicon substrate that exposes a first region that defines the cantilever forming region; (d) etching the silicon substrate to a predetermined depth from a surface of the first region of the silicon substrate; (e) forming a wall protective film on a side wall of the etched first region; (f) forming a first wall where the wall protective film is not formed by dry etching the first region of the silicon substrate exposed through the wall protective film to a predetermined depth; and (g) forming a cantilever that is supported at one end by the silicon substrate and a stopper that limits a deformation of the cantilever by etching the first wall exposed through the wall protective film. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of fabricating a pressure sensor, comprising:
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(a) forming piezoresistors on both ends of a beam forming region on an upper surface of a silicon substrate; (b) forming a wire and an electrode pad connected to both ends of each of the piezoresistors; (c) forming an insulating layer that exposes a first region that defines the beam forming region on the silicon substrate; (d) etching the silicon substrate to a predetermined depth from a surface of the first region of the silicon substrate; (e) forming a wall protective film on a side wall of the etched first region; (f) forming a first wall where the wall protective film is not formed by dry etching the first region of the silicon substrate exposed through the wall protective film to a predetermined depth; and (g) forming a beam that is supported at both ends by the silicon substrate and a stopper that limits a deformation of the beam by etching the first wall exposed through the wall protective film. - View Dependent Claims (14, 15, 16)
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Specification