Monitoring system for valve device
First Claim
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1. A monitoring system for a valve device, comprising:
- a semiconductor single crystalline substrate including a bridged circuit, the bridged circuit comprising impurity-diffused resistors, wherein;
the impurity-diffused resistors are p-type impurity-diffused resistors having a longitudinal direction located in a <
110>
direction of the semiconductor single crystalline substrate; and
the semiconductor single crystalline substrate is mounted to a portion of the valve device such that the <
110>
direction of the semiconductor single crystalline substrate is located in an axial direction of a valve stem or a drive shaft of the valve device.
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Abstract
A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device'"'"'s valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.
10 Citations
57 Claims
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1. A monitoring system for a valve device, comprising:
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a semiconductor single crystalline substrate including a bridged circuit, the bridged circuit comprising impurity-diffused resistors, wherein; the impurity-diffused resistors are p-type impurity-diffused resistors having a longitudinal direction located in a <
110>
direction of the semiconductor single crystalline substrate; andthe semiconductor single crystalline substrate is mounted to a portion of the valve device such that the <
110>
direction of the semiconductor single crystalline substrate is located in an axial direction of a valve stem or a drive shaft of the valve device. - View Dependent Claims (5, 8, 11, 14, 17, 20, 23, 26, 29, 32, 35, 38, 41, 44, 47, 50, 53, 54, 55, 56, 57)
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2. A monitoring system for a valve device, comprising:
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a semiconductor single crystalline substrate including a bridged circuit, and the bridged circuit comprising impurity-diffused resistors, wherein; the impurity-diffused resistors are n-type impurity-diffused resistors having a longitudinal direction located in a <
100>
direction of the semiconductor single crystalline substrate; andthe semiconductor single crystalline substrate is mounted to a portion of the valve device such that the <
100>
direction of the semiconductor single crystalline substrate is located in an axial direction of a valve stem or a drive shaft of the valve device. - View Dependent Claims (6, 9, 12, 15, 18, 21, 24, 27, 30, 33, 36, 39, 42, 45, 48, 51)
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3. A monitoring system for a valve device, comprising:
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a semiconductor single crystalline substrate including a bridged circuit, the bridged circuit comprising impurity-diffused resistors, wherein; the semiconductor single crystalline substrate is mounted to a portion of the valve device; and the semiconductor single crystalline substrate includes a first bridged circuit comprising p-type impurity-diffused resistors and a second bridged circuit comprising n-type impurity-diffused resistors. - View Dependent Claims (4, 7, 10, 13, 16, 19, 22, 25, 28, 31, 34, 37, 40, 43, 46, 49, 52)
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Specification