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Semiconductor package having through-hole via on saw streets formed with partial saw

  • US 7,585,750 B2
  • Filed: 09/25/2007
  • Issued: 09/08/2009
  • Est. Priority Date: 05/04/2007
  • Status: Active Grant
First Claim
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1. A method of forming through-hole vias in a semiconductor wafer, comprising:

  • forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of each die, the semiconductor wafer having saw street guides between each die;

    forming a trench in the saw street guides without using support material to support the semiconductor wafer, the trench extending partially but not completely through the semiconductor wafer, the uncut portion of the saw street guides below the trench along a backside of the semiconductor wafer being more than 60% of a thickness of the semiconductor wafer to maintain structural support for the semiconductor wafer without the support material during the processing steps of;

    (a) filling the trench with organic material,(b) forming a plurality of via holes in the organic material,(c) forming traces between the contact pads and via holes, and(d) depositing conductive material in the via holes to form metal vias;

    removing the uncut portion of the saw street guide below the trench along the backside of the semiconductor wafer portion;

    applying dicing tape to the backside of the semiconductor wafer;

    cutting through the metal vias to the dicing tape; and

    singulating the semiconductor wafer along the saw street guides by removing the dicing tape to separate the die into individual units.

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