Semiconductor packaging device comprising a semiconductor chip including a MOSFET

• US 7,586,180 B2
• Filed: 07/02/2008
• Issued: 09/08/2009
• Est. Priority Date: 07/31/2003
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Sato, Hiroshi, Hata, Toshiyuki
• Primary Examiner(s): Pham; Thanh V
• Assistant Examiner(s): KARIMY, TIMOR
• Application Number:
  US12/216,363
• Publication Number:
  US 20080272472A1
• Time in Patent Office: 433 Days
• Field of Search: 257/678, 257/666, 257780-781, 257/783, 257/772, 257/713, 257706-707, 257/711, 257/787, 257/341, 257/775, 257/796, 257/690, 257/276, 257/E33.056, 257/E23.001, 257/E23.061
• US Class Current: 257/678
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0558 being stacked
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83139 Guiding structures on the body
• CPC Class Codes: H01L 2224/8314 Guiding structures outside the body
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/84138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

Claims

1. A semiconductor device comprising:

a semiconductor chip having a first major surface and a second major surface opposite to the first major surface, the semiconductor chip including a MOSFET,

the semiconductor chip having a source electrode of the MOSFET on first major surface thereof,

the semiconductor chip having a gate electrode of the MOSFET on the first major surface thereof,

the semiconductor chip having a drain electrode of the MOSFET on the second major surface thereof,

a source electrode terminal disposed under the semiconductor chip and electrically connected to the source electrode,

the source electrode terminals being made of a lead frame;

a gate electrode terminal disposed under the semiconductor chip and electrically connected to the gate electrode,

the gate electrode terminals being made of a lead frame;

drain electrode terminals disposed under the semiconductor chip and electrically connected to the drain electrode,

the drain electrode terminals being made of a lead frame;

a sealing member having a top surface and a bottom surface opposite to the top surface,

the sealing member sealing the semiconductor chip and parts of the drain, source and gate electrode terminals;

wherein the source, gate and drain electrode terminals are exposed from the bottom surface of the sealing member;

wherein the source and gate electrode terminals are positioned between the drain electrode terminals;

wherein a drain electrode plate is disposed over the semiconductor chip and electrically connected to the drain electrode terminals,

the drain electrode plate being integrally connected with the drain electrode terminals; and

wherein the drain electrode plate is exposed from the top surface of the sealing member.

2. The semiconductor device according to claim 1, wherein the source, gate and drain electrode terminals are made of copper plates.

3. The semiconductor device according to claim 1, wherein the drain electrode plate is made of a copper plate.

4. The semiconductor device according to claim 1, wherein the source and gate electrode terminals are connected with the source and gate electrodes respectively via adhesives.

5. The semiconductor device according to claim 1, wherein the drain electrode plate is connected with the drain electrode via an adhesive.

6. The semiconductor device according to claim 1, wherein the sealing member is comprised of an insulating resin.

7. The semiconductor device according to claim 1, wherein the MOSFET is a power MOSFET.

8. The semiconductor device according to claim 1, wherein the MOSFET has a gate electrode formed in a trench which is formed in a semiconductor substrate.