Magnetic data storage system

• US 7,586,828 B1
• Filed: 10/25/2004
• Issued: 09/08/2009
• Est. Priority Date: 10/23/2003
• Status: Expired due to Fees

• Current Assignee: TiNi Alloy Company
• Original Assignee: TiNi Alloy Company
• Inventors: Ma, Xiaoguang
• Primary Examiner(s): Young; Wayne R
• Assistant Examiner(s): SIMPSON, LIXI CHOW
• Application Number:
  US10/972,759
• Time in Patent Office: 1,779 Days
• Field of Search: None
• US Class Current: 369/126
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11B 11/007 with reproducing by means directly associated with the tip of a microscopic electrical probe as defined in G11B9/14 details of heads G11B9/1409; disposition or mounting of heads G11B9/1418
• CPC Class Codes: G11B 9/1436 with provision for moving the heads or record carriers relatively to each other
• CPC Class Codes: G11B 9/149 characterised by the memorising material or structure

Abstract

A magnetic data storage system having a scanning tip array based system and a shape memory thin film-based data storage medium. Prior to storing data, the medium is in its non-ferromagnetic austenitic phase. Indentation stress locally induces martensitic transformation of the medium, which in turn generates a locally ferromagnetized surface. By measuring the magnetic force interaction between the tip and the medium surface, inscribed magnetic information can be read. The shape memory thin film enables the stress-induced local magnetic transition to provide a fast data storage system with high data storage density.

Claims

1. A magnetic data storage system comprising a storage medium having a surface, the medium being comprised of a shape memory alloy material which transforms from a non-ferromagnetic austenite crystalline phase to a ferromagnetic martensite crystalline phase responsive to a mechanical stress, a scanning tip, and an operating structure for moving the tip against the surface to cause the tip to apply a stress which is sufficient to form an indent in the surface while transforming an area of the medium surrounding the indent into the ferromagnetic martensite crystalline phase with the transformed area representing a data bit.

2. A magnetic data storage system as in claim 1 in which the storage medium further comprises a substrate, the material is carried on the substrate, and the material comprises a sputter-deposited thin film in the non-ferromagnetic austenite crystalline phase.

3. A magnetic data storage system as in claim 2 the operating structure comprises a scanning tip array system having a plurality of scanning tips and a plurality of cantilevers, each cantilever carrying a scanning tip, each scanning tip being covered with a ferromagnetic thin film.

4. A magnetic data storage system as in claim 3 in which thin film directly faces the scanning tip array system.

5. A magnetic data storage system as in claim 2 in which the thin film has a thickness of approximately 500 nm.

6. A magnetic data storage system as in claim 2 and further comprising means for exerting relative motion between the surface and the scanning tip array, the relative motion enabling writing, reading, and erasing of the data bit on the medium.

7. A magnetic data storage system as in claim 1 in which the tip comprises a means for applying magnetic field to the medium.

8. A method of storing data comprising the steps of providing a storage medium comprised of a shape memory alloy material, the alloy being in a non-ferromagnetic austenite crystalline phase, and applying a stress on a data storing area of the medium sufficient to transform the area of material to a ferromagnetic martensite crystalline phase with the transformed area representing a stored data bit.

10. A method as in claim 8 and further comprising the step of providing a scanning tip, scanning the scanning tip array system with respect to the transformed area, and generating an read output signal when the tip is scanned over the transformed area.

11. A method as in claim 8 and further comprising the step of erasing the stored data bit a step selected from the group consisting of 1) heating the transformed area to the material'"'"'s crystalline phase change transition temperature and 2) applying a high amplitude, high frequency AC magnetic field to the transformed area.

12. A method as in claim 8 in which the stress is applied by mechanically indenting the data storing area in an external magnetic field, removing the mechanical stress and the external magnetic field, and freezing the external magnetic field.

9. A method of storing data comprising the steps of providing a storage medium comprised of a shape memory alloy material, the alloy being in a non-ferromagnetic austenite crystalline phase, and applying a magnetic field on an area of the medium sufficient to transform the material to a ferromagnetic martensite crystalline phase with the transformed area representing a stored data bit.