Method of fabricating vertical structure LEDs

• US 7,588,952 B2
• Filed: 01/07/2005
• Issued: 09/15/2009
• Est. Priority Date: 04/09/2002
• Status: Expired due to Term

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Yoo, Myung Cheol, Jeong, In-Kwon, Lee, Jong-Lam
• Primary Examiner(s): Fourson; George
• Assistant Examiner(s): Parker; John M
• Application Number:
  US11/030,323
• Publication Number:
  US 20060244001A1
• Time in Patent Office: 1,712 Days
• Field of Search: 438/26, 438/28, 438/42, 438/479, 257/E33.057, 257/E33.032
• US Class Current: 438/28
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01C 7/008 Thermistors H01C7/02 - H01C7/06 take precedence
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 438/958 Passivation layer
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Claims

1. A method of producing semiconductor devices, comprising:

growing a plurality of semiconductor layers on an insulating substrate;

forming first ohmic contacts on the plurality of semiconductor layers;

forming a metal support layer over the first ohmic contacts;

removing the insulating substrate;

forming second ohmic contacts adjacent to the plurality of semiconductor layers; and

separating out individual semiconductor devices,

wherein the first ohmic contacts and the second ohmic contacts are respectively located at opposite sides of the plurality of semiconductor layers.

2. The method of producing semiconductor devices according to claim 1, further including forming trenches through the plurality of semiconductor layers, wherein the trenches define a plurality of individual semiconductor devices.

3. The method of producing semiconductor devices according to claim 2, wherein the trenches extend to the insulating substrate.

4. The method of producing semiconductor devices according to claim 2, wherein forming trenches is performed by using inductively coupled plasma reactive ion etching (ICP RIE).

5. The method of producing semiconductor devices according to claim 1, wherein forming a support layer over the first ohmic contacts includes forming a support layer adjacent to the first ohmic contacts.

6. The method of producing semiconductor devices according to claim 1, wherein the support layer is a metallic support layer.

7. The method of producing semiconductor devices according to claim 2, further including filling the trenches to form posts.

8. The method of producing semiconductor devices according to claim 7, wherein the support layer is over the posts.

9. The method of producing semiconductor devices according to claim 1, further including passivating the plurality of semiconductor layers.

10. The method of producing semiconductor devices according to claim 9, wherein passivating is performed after the second ohmic contacts are formed.

11. The method of producing semiconductor devices according to claim 9, wherein passivating the plurality of semiconductor layers is performed after the insulating substrate is removed.

12. The method of producing semiconductor devices according to claim 1, further including forming metal pads over the second ohmic contacts.

13. The method of producing semiconductor devices according to claim 1, wherein separating out individual semiconductor devices includes etching through the support layer.

14. The method of producing semiconductor devices according to claim 1, wherein separating out individual semiconductor devices includes sawing through the support layer.

15. The method of producing semiconductor devices according to claim 14, wherein sawing through the support layer is performed at a temperature less than 0°

C.

16. The method of producing semiconductor devices according to claim 1, wherein removing the insulating substrate is performed by using a laser lift off procedure.

17. The method of producing semiconductor devices according to claim 16, wherein the laser lift off procedure includes radiating laser light through the insulating substrate.

18. A method of fabricating light emitting diodes, comprising:

forming a GaN buffer layer over an insulating substrate;

forming an active layer over the GaN buffer layer;

forming a GaN contact layer over the active layer;

forming a first ohmic contact over the GaN contact layer;

forming a support structure over the first ohmic contact;

removing the insulating substrate;

forming a second ohmic contact over the GaN buffer layer; and

separating out individual light emitting diodes,

wherein the first ohmic contact and the second ohmic contact are respectively located at opposite sides of the active layer.

19. The method of fabricating light emitting diodes according to claim 18, further including forming trenches through the GaN buffer layer, the active layer, and the GaN contact layer and between individual light emitting diodes.

20. The method of fabricating light emitting diodes according to claim 19, wherein the trenches extend to the insulating substrate.

21. The method of fabricating light emitting diodes according to claim 20, further including filling the trenches to form posts.

22. The method of fabricating light emitting diodes according to claim 21, wherein the support structure is over the posts.

23. The method of fabricating light emitting diodes according to claim 19, wherein forming trenches is performed using inductively coupled plasma reactive ion etching (ICP RIE).

24. The method of fabricating light emitting diodes according to claim 19, further including forming a passivation layer over exposed portions of the GaN buffer layer, of the active layer, and of the GaN contact layer.

25. The method of fabricating light emitting diodes according to claim 24, wherein the passivation layer is formed after the insulating substrate is removed.

26. The method of fabricating light emitting diodes according to claim 18, further including forming metal pads over the second ohmic contacts.

27. The method of fabricating light emitting diodes according to claim 18, wherein separating out individual light emitting diodes includes etching through the support structure.

28. The method of fabricating light emitting diodes according to claim 18, wherein separating out individual light emitting diodes includes sawing through the support structure.

29. The method of fabricating light emitting diodes according to claim 28, wherein sawing through the support structure is performed at a temperature less than 0°

C.

30. The method of fabricating light emitting diodes according to claim 18, wherein removing the insulating substrate is performed by using a laser lift off procedure.

31. The method of fabricating light emitting diodes according to claim 30, wherein the laser lift off procedure includes radiating laser light through the insulating substrate.

32. The method of fabricating light emitting diodes according to claim 18, wherein forming a support structure includes electroplating.

33. The method of fabricating light emitting diodes according to claim 18, wherein forming a support structure includes electro-less plating.

34. The method of fabricating light emitting diodes according to claim 18, wherein forming a support structure includes CVD.

35. The method of fabricating light emitting diodes according to claim 18, wherein forming a support structure includes sputtering.

36. The method of fabricating light emitting diodes according to claim 18, wherein forming a support structure over the first ohmic contact includes forming a support structure adjacent to the first ohmic contact.

37. The method of fabricating light emitting diodes according to claim 18, wherein the support structure is a metallic support structure.

38. A method of fabricating light emitting diodes, comprising:

forming a first GaN-based layer over an insulating substrate;

forming an active layer over the first GaN-based layer;

forming a second GaN-based layer over the active layer;

forming a first ohmic contact over the second GaN-based layer;

forming a support structure over the first ohmic contact;

removing the insulating substrate; and

forming a second ohmic contact over the first GaN-based layer,

wherein the first ohmic contact and the second ohmic contact are respectively located at opposite sides of the active layer, wherein the first ohmic contact layer is located between the second GaN-based layer and the support structure.

39. The method of fabricating light emitting diodes according to claim 38, wherein the support structure is a metallic support structure.

40. The method of fabricating light emitting diodes according to claim 38, further including forming trenches through the first GaN-based layer, the active layer, and the second GaN-based layer.

41. The method of fabricating light emitting diodes according to claim 40, wherein forming trenches is performed by etching along the direction from the second GaN-based layer to the first GaN-based layer.