Atomic layer deposition and conversion

• US 7,589,029 B2
• Filed: 05/02/2002
• Issued: 09/15/2009
• Est. Priority Date: 05/02/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Derderian, Garo J., Sandhu, Gurtej Singh
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US10/137,058
• Publication Number:
  US 20030207593A1
• Time in Patent Office: 2,693 Days
• Field of Search: 438/785, 438/763, 257/E21.269, 257/E21.267
• US Class Current: 438/785
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/0215 the material containing tantalum, e.g. TaSiOx
• CPC Class Codes: H01L 21/02153 the material containing titanium, e.g. TiSiOx
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02244 of a metallic layer
• CPC Class Codes: H01L 21/02249 formation by combined oxidation and nitridation performed simultaneously
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/31683 of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures

Abstract

A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.

Claims

1. An atomic layer deposition method of forming a TaNTaSi thin film electrode on a layer including silicon, comprising:

atomic layer depositing a thin metal film including tantalum on the layer including silicon;

enclosing the layer including silicon with an activated nitrogen hydride gas including ammonia;

forming a thin metal nitride film including TaNTaSi by reacting the thin metal film including tantalum with the activated nitrogen hydride including ammonia; and

forming a metal-containing TiO_xSiO_x electrode in contact with the thin metal nitride film including TaNTaSi in a region associated with a trench including a region of SrBaTiO₃.

2. The atomic layer deposition method of claim 1, wherein forming a metal-containing TiO_xSiO_x electrode includes providing a first, metal-containing gas, providing a second, activated hydrogen gas, reacting the first gas with the second gas to deposit a metal layer, and oxidizing the metal layer.

3. The method of claim 2, wherein oxidizing includes oxidizing with an activated gas comprising N₂O.

4. The method of claim 2, wherein oxidizing includes oxidizing to form a metal oxide layer matched to a metal-containing electrode, Si in a region associated with a trench including a region of SrBaTiO₃.