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Atomic layer deposition and conversion

  • US 7,589,029 B2
  • Filed: 05/02/2002
  • Issued: 09/15/2009
  • Est. Priority Date: 05/02/2002
  • Status: Active Grant
First Claim
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1. An atomic layer deposition method of forming a TaNTaSi thin film electrode on a layer including silicon, comprising:

  • atomic layer depositing a thin metal film including tantalum on the layer including silicon;

    enclosing the layer including silicon with an activated nitrogen hydride gas including ammonia;

    forming a thin metal nitride film including TaNTaSi by reacting the thin metal film including tantalum with the activated nitrogen hydride including ammonia; and

    forming a metal-containing TiOxSiOx electrode in contact with the thin metal nitride film including TaNTaSi in a region associated with a trench including a region of SrBaTiO3.

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