Optical integrated device manufacturing process and device manufactured by the process thereof

• US 7,590,326 B2
• Filed: 01/16/2008
• Issued: 09/15/2009
• Est. Priority Date: 01/18/2007
• Status: Expired due to Fees

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Mastromatteo, Ubaldo, Fincato, Antonio
• Primary Examiner(s): PENG, CHARLIE YU
• Application Number:
  US12/015,199
• Publication Number:
  US 20080175531A1
• Time in Patent Office: 608 Days
• Field of Search: 385/14, 385129-132, 438/31, 216/24, 264/1.24
• US Class Current: 385/129
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence

Abstract

The invention relates to a process for manufacturing an integrated optical device comprising the deposition on a support substrate of a multilayer being formed by first and second cladding layers in order to hold in a multilayer first region a waveguide core layer. The core is provided with an electromagnetic radiation (L) inlet/outlet port. Furthermore, the process provides for the formation of a regulation layer having a first etching speed associated therewith, which is distinguished from the etching speeds of the cladding layers. Subsequently to an etching of a multilayer second region, a cavity is obtained having a first wall which is inclined relative to the substrate at least partially extending in said first region and which is near said inlet/outlet port. Such etching removes portions of the regulation layer and the cladding layers at different speeds in order to result in the formation of the inclined wall.

Claims

1. A process for manufacturing an integrated optical device comprising the steps of:

depositing on a support substrate a multilayer comprising first and second cladding layer in order to hold in a multilayer first region a core layer of a waveguide of the optical device, said core being provided with an electromagnetic radiation inlet/outlet port;

forming a regulation layer at least in said multilayer first region having associated a first etching speed which is distinguished from respective etching speeds of said first and second cladding layers;

etching a multilayer second region adjacent said first region, thus obtaining a cavity having a first wall which inclined relative to the substrate such as to at least partially extend in said first region and turning out to be near said inlet/outlet port, said etching resulting in a removal of portions of the regulation layer and the cladding layers at different speeds, in order to cause the formation of said first inclined wall; and

positioning said regulation layer between said core and said substrate.

2. The process according to claim 1, wherein said first inclined wall comprises a surface within the multilayer which is facing the core inlet/outlet port adapted to reflect the electromagnetic radiation entering/exiting said port.

3. The process according to claim 1, wherein said first etching speed of said regulation layer is higher than the etching speeds of said first and second cladding layers.

4. The process according to claim 1, wherein said formation step of the regulation layer comprises the deposition step on the substrate of a p-type doped silicon dioxide layer.

5. The process according to claim 4, wherein said regulation layer has a thickness of about 1 μ

m and is doped with phosphor;

the phosphor being 3% by weight relative to the silicon dioxide.

6. The process according to claim 1, wherein said etching step forms a cavity second wall which is inclined relative to the substrate such as to extend in said second region and turning out to be opposite said first wall.

7. The process according to claim 1, wherein said first and second inclined walls have an inclination relative to the substrate ranging between 15-40 degrees.

11. The process according to claim 7, wherein the inclination of said first and second inclined walls can be adjusted by varying the dopant concentration of the regulation layer.

8. A process for manufacturing an integrated optical device comprising the steps of:

depositing on a support substrate a multilayer comprising first and second cladding layer in order to hold in a multilayer first region a core layer of a waveguide of the optical device, said core being provided with an electromagnetic radiation inlet/outlet port;

forming a regulation layer at least in said multilayer first region having associated a first etching speed which is distinguished from respective etching speeds of said first and second cladding layers; and

etching a multilayer second region adjacent said first region, thus obtaining a cavity having a first wall which inclined relative to the substrate such as to at least partially extend in said first region and turning out to be near said inlet/outlet port, said etching resulting in a removal of portions of the regulation layer and the cladding layers at different speeds, in order to cause the formation of said first inclined wall, said etching step further comprising

performing an anisotropic etching through an opening of a multilayer protective mask in order to open said cavity in the multilayer provided with walls which are essentially orthogonal to the substrate; and

performing a second wet etching in order to enlarge said cavity by creating said first and second inclined walls.

9. The process according to claim 8, wherein said an isotropic etching is a dry etching performed by means of plasma.

10. The process according to claim 8, wherein said second wet etching is performed by employing hydrofluoric acid-based solutions.

12. A process for manufacturing an integrated optical device comprising the steps of:

depositing on a support substrate a multilayer comprising first and second cladding layer in order to hold in a multilayer first region a core layer of a waveguide of the optical device, said core being provided with an electromagnetic radiation inlet/outlet port;

forming a regulation layer at least in said multilayer first region having associated a first etching speed which is distinguished from respective etching speeds of said first and second cladding layers;

etching a multilayer second region adjacent said first region, thus obtaining a cavity having a first wall which inclined relative to the substrate such as to at least partially extend in said first region and turning out to be near said inlet/outlet port, said etching resulting in a removal of portions of the regulation layer and the cladding layers at different speeds, in order to cause the formation of said first inclined wall,

wherein said deposition step of the multilayer comprises the further steps of;

depositing the first cladding layer above said regulation layer, said first layer being non-doped silicon dioxide;

depositing the core layer above said first cladding layer, said core layer being germanium-doped silicon dioxide;

performing a photolithographic process of said core layer in order to obtain the layout of the waveguide core in said multilayer first region;

covering said core by means of the second cladding layer, said second cladding layer being boron and phosphor-doped silicon dioxide.

13. The process according to claim 12, wherein said core layer has a thickness of about 3-4 μ

m, and it can be doped also with phosphor, nitrogen oxide, and alumina.

14. The process according to claim 12, wherein said first and second cladding layers have thicknesses of about 15 μ

m and a same refractive index.

15. An integrated optical device comprising:

a multilayer deposited on a support substrate, the multilayer including first and second cladding layers in order to hold in a multilayer first region a core layer of a waveguide of the optical device, said core being provided with at least an electromagnetic radiation inlet/outlet port;

a cavity obtained in a multilayer second region adjacent said first region, said cavity being provided with a first wall which is inclined relative to the substrate such as to at least partially extend in said first region and turning out to be near said inlet/outlet port;

a regulation layer at least a portion of which is positioned in said multilayer first region sandwiched between the substrate and the first cladding layer, said regulation layer having associated a first etching speed distinguished from respective etching speeds of said first and second cladding layers.

16. The integrated optical device according to claim 15, comprising a further waveguide core layout in said multilayer second region, said further core having a respective electromagnetic radiation inlet/outlet port in the proximity of a second wall of said cavity which is inclined relative to the substrate and opposite said first wall.

17. An optical system comprising:

the integrated optical device in accordance with the claim 15 to allow the propagation of an electromagnetic radiation;

a further optical device coupled to said optical device.

18. The optical system according to claim 17, wherein said further optical device is a photodetector of the APD or PIN type which is secured on said integrated optical device and provided with an active region in order to receive said electromagnetic radiation.

19. The optical system according to claim 17, wherein said further optical device is a VCSEL or a surface emitting LED to transmit said electromagnetic radiation.

20. The optical system according to claim 17, wherein said further optical device is a passive optical device for the coupling of the electromagnetic radiation coming from said integrated optical device to an optical guide.

21. The optical system according to claim 20, wherein said passive optical device is an optical mirror, an integrated micro-optic device of the Bragg grating-type, or a holographic device.

22. The integrated optical device according to claim 15, wherein said regulation layer is positioned between said core and said substrate.

23. The integrated optical device according to claim 15, wherein the first inclined wall is on a side of the cavity closest to the inlet/outlet port and the cavity is further provided with a second inclined wall which is spaced apart across the cavity from the first inclined wall.

24. The process according to claim 15, wherein the first inclined wall is on a side of the cavity closest to the inlet/outlet port and the cavity is further provided with a second inclined wall which is spaced apart across the cavity from the first inclined wall.