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Semiconductor device having well with peak impurity concentrations and method for fabricating the same

  • US 7,592,241 B2
  • Filed: 12/22/2004
  • Issued: 09/22/2009
  • Est. Priority Date: 09/27/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a well of a first conductivity type formed in a semiconductor substrate and having a channel region;

    a gate electrode formed over the channel region with an insulating film interposed therebetween;

    source/drain regions of a second conductivity type formed in the well on both sides of the gate electrode, sandwiching the channel region; and

    a pocket region of the first conductivity type formed between at least one of the source/drain regions and the channel region,the well having a first peak of an impurity concentration of first impurities of the first conductivity type at a first depth deeper than the pocket region and shallower than the bottom of the source/drain regions, and a second peak of the impurity concentration of second impurities of the first conductivity type at a second depth near the bottom of the source/drain regions.

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