High speed electron tunneling devices

• US 7,595,500 B2
• Filed: 08/14/2006
• Issued: 09/29/2009
• Est. Priority Date: 05/21/2001
• Status: Expired due to Fees

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: University Technology Corporation
• Inventors: Eliasson, Blake J., Moddel, Garret
• Primary Examiner(s): Nguyen; Thinh T
• Application Number:
  US11/503,585
• Publication Number:
  US 20060273301A1
• Time in Patent Office: 1,142 Days
• Field of Search: 257/425, 257/14, 257/25, 257/661, 257/E29.101, 257/30, 257/9, 257/46, 257/104, 257/106, 257/E29.042, 257/E29.339, 257/E21.353, 257/E21.367
• US Class Current: 257/30
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 29/7311 Tunnel transistors
• CPC Class Codes: H01L 29/7606 Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H01L 31/08 in which radiation controls flow of current through the device, e.g. photoresistors
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H01L 33/0004 Devices characterised by their operation
• CPC Class Codes: H01L 33/0037 having a MIS barrier layer
• CPC Class Codes: H10N 60/10 Junction-based devices
• CPC Class Codes: H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching integrated devices or assemblies of multiple devices H10N79/00

Abstract

A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

Claims

1. An electron tunneling device comprising:

first and second metallic layers spaced apart from one another such that a voltage can be provided across the first and second metallic layers;

an insulating arrangement disposed between the first and second metallic layers, said insulating arrangement including a first insulating layer and a second insulating layer that is positioned between the first insulating layer and the second metallic layer, and at least one of the first and second insulating layers consists essentially of an amorphous insulating material, and the metallic layers and the insulating layers are configured to cooperate with one another to exhibit, in an unbiased state of the device with said voltage at zero volts, an overall energy band profile in which said first insulating layer has an unbiased conduction band edge height, and said second insulating layer has a higher unbiased conduction band edge height that is greater than the unbiased conduction band edge height associated with said first insulating layer, and the metallic layers and the insulating arrangement are further configured to cooperate with one another in

a reverse bias state responsive to a reverse bias voltage as the provided voltage having a given magnitude, such that the reverse bias voltage causes a reverse electron tunneling, across at least a portion of the insulating arrangement in a reverse direction away from the second metallic layer towards the first metallic layer, that results in a reverse bias current in the reverse direction between the metallic layers, and

a forward bias state responsive to a forward bias voltage having said given magnitude at an opposite polarity with respect to the reverse bias voltage, such that said forward bias voltage causes a forward electron tunneling, across at least a portion of the insulating arrangement in a forward direction away from the first metallic layer and towards the second metallic layer, that results in a forward bias current in the forward direction between the metallic layers that is greater in magnitude than the reverse bias current.

2. The electron tunneling device of claim 1 wherein the reverse bias current depends upon the provided voltage according to a reverse bias current-versus-voltage curve, and the forward bias current depends on the provided voltage according to a forward bias current-versus-voltage curve, and the forward and reverse bias curves cooperate to define an overall current-versus-voltage curve having a given degree of asymmetry such that said given degree of asymmetry results at least in part from a difference between a forward bias current magnitude and a reverse bias current magnitude at the given voltage amplitude.

3. The electron tunneling device of claim 2 wherein the device is configured such that the reverse bias state and the forward bias state cooperate so that said given degree of asymmetry in the overall current-versus-voltage curve causes said device to act at least generally as a rectifier device such that said device receives an input voltage signal as said provided voltage and produces in response thereto an output current signal such that said output current signal is rectified as compared to said input voltage signal.

4. The electron tunneling device of claim 1 wherein the forward bias current depends on the provided voltage according to a forward bias current-versus-voltage curve, and wherein said insulating layers and said metallic layers are further configured to cooperate with one another such that said device exhibits, in said forward biased state and for a predetermined range of values for the voltage magnitude, a negative differential resistance such that a portion of the forward biased current-versus-voltage curve, corresponding to the predetermined range, exhibits a negative slope.

5. The electron tunneling device of claim 1 wherein the first and second metallic layers and the insulating arrangement are configured to cooperate with one another such that the device exhibits, in the unbiased state, an overall energy band profile in which (i) said first metallic layer exhibits a Fermi level having an unbiased value in the unbiased state, (ii) said first insulating layer exhibits a first insulator profile, as a part of said overall energy band profile, that is characterized by said unbiased conduction band edge height, and (iii) said second insulating layer exhibits a second insulator profile, as another part of said overall energy band profile, that is characterized by said higher unbiased conduction band edge height, and the first and second metallic layers and the insulating arrangement are further configured to cooperate with one another such that in said forward biased state said overall energy band profile changes, as a result of the forward bias voltage and as compared to the overall energy band profile in said unbiased state, such that (i) the Fermi level associated with the first metallic layer has a forward biased value, and (ii) the first insulator profile changes to a forward biased state in which a low portion of the first insulator profile exhibits a forward biased conduction band edge height that is below the forward biased value of the Fermi level.

6. The electron tunneling device of claim 5 wherein said first metallic layer, said first insulating layer, and said second insulating layer are configured to cooperate with one another such that in said forward biased state the low portion of the first insulator profile defines a quantum well through which resonant tunneling occurs as part of said forward electron tunneling.

7. The electron tunneling device of claim 6 wherein as a result of said resonant tunneling said device exhibits, at the given forward bias voltage magnitude, a negative differential resistance.

8. The electron tunneling device of claim 1 wherein said first metallic layer consists essentially of a metal.

9. The electron tunneling device of claim 1 wherein said second metallic layer consists essentially of a metal.

10. The electron tunneling device of claim 1 wherein said first metallic layer consists essentially of a semi-metal.

11. The electron tunneling device of claim 1 wherein said second metallic layer consists essentially of a semi-metal.

12. The electron tunneling device of claim 1 wherein a specific one of the first and second insulating layers consists essentially of niobium oxide.

13. The electron tunneling device of claim 1 wherein a specific one of the first and second insulating layers consists essentially of tantalum oxide.

14. The electron tunneling device of claim 1 wherein said first insulating layer consists essentially of niobium oxide and said second insulating layer consists essentially of tantalum oxide.

15. The electron tunneling device of claim 1 wherein the first and second metallic layers are configured such that said provided voltage is directly applied to said first and second metallic layers from an externally provided pair of electrically conductive terminals.

16. The electron tunneling device of claim 1 wherein said first insulating layer is at least generally laterally coextensive with said first metallic layer, and said first metallic layer completely covers a major surface of said first insulating layer.

17. The electron tunneling device of claim 1 wherein said second insulating layer is at least generally laterally coextensive with said second metallic layer, and said second metallic layer completely covers a major surface of said second insulating layer.

18. The electron tunneling device of claim 1 wherein said insulating arrangement includes a third insulating layer disposed between the first and second metallic layers and placed in layered contact with at least a selected one of said first and second insulating layers.

19. The electron tunneling device of claim 18 wherein a given one of the three insulating layers is in layered contact with said first metallic layer such that said first metallic layer is at least generally coextensive with and completely covers the given insulating layer, and a different given one of said insulating layers is in layered contact with said second metallic layer such that said second metallic layer is at least generally coextensive with and completely covers the different given insulating layer.

20. The electron tunneling device of claim 18 wherein the first and second metallic layers are configured such that said provided voltage is directly applied to said first and second metallic layers from an externally provided pair of electrically conductive terminals.

21. The electron tunneling device of claim 1 wherein the forward bias current depends on the provided voltage according to a forward bias current-versus-voltage curve, and the forward bias current-versus-voltage curve exhibits a given degree of non-linearity that changes with changes in said provided voltage, and said insulating arrangement includes a third layer of insulator material to increase, at least over a range of provided voltages, said given degree of non-linearity.

22. The electron tunneling device of claim 1 wherein said first and second metallic layers are configured to form an antenna that absorbs an absorbed fraction of incident electromagnetic energy, in cooperation with the insulating arrangement, which absorbed fraction varies responsive to a change in said provided voltage and correspondingly reflects a reflected fraction of the incident electromagnetic energy, which reflected fraction inversely varies responsive to the change in the provided voltage such that the reflected fraction of electromagnetic energy is modulated responsive to the change in the provided voltage.

23. The electron tunneling device of claim 1 wherein said insulating arrangement includes a third non-insulating layer that is positioned in a spaced apart relationship with the first and second metallic layers for receiving an applied voltage to influence at least one of (i) the reverse bias electron tunneling and therefore the reverse bias current, and (ii) the forward bias electron tunneling and therefore the forward bias current.

24. The electron tunneling device of claim 23 wherein said third non-insulating layer is positioned in said spaced apart relationship with the first and second metallic layers through a passivation layer.

25. The electron tunneling device of claim 1 wherein said first and second metallic layers are configured to cooperate with one another to form an antenna structure for receiving an incident electromagnetic radiation that is incident thereon, over a range of frequencies, and said insulating arrangement cooperates with the first arrangement to convert at least a portion of the incident electromagnetic radiation to an electrical signal that is available between the first and second metallic layers.

26. The electron tunneling device of claim 25 wherein the antenna structure is configured to simultaneously receive two distinct frequencies of electromagnetic radiation such that the electrical signal includes a beat frequency that is equal to a difference between the two distinct frequencies.