Nitride micro light emitting diode with high brightness and method of manufacturing the same
First Claim
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1. A nitride micro LED (Light Emitting Diode) with high brightness, comprising:
- a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, and active layer 3 formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer;
a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars, wherein the gap filling material includes at least one selected from SiO2, Si3N4, or a combination thereof, polyamide, and ZrO2/SiO2 or HfO2/SiO2, and wherein the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP (Chemical Mechanical Polishing) process;
a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars;
a p-type electrode formed on the p-type transparent electrode;
an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time; and
wherein a top surface of the p-type GaN layer of the luminous pillars has convex surfaces formed through the CMP process.
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Abstract
The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
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3 Claims
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1. A nitride micro LED (Light Emitting Diode) with high brightness, comprising:
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a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, and active layer 3 formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars, wherein the gap filling material includes at least one selected from SiO2, Si3N4, or a combination thereof, polyamide, and ZrO2/SiO2 or HfO2/SiO2, and wherein the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP (Chemical Mechanical Polishing) process; a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars; a p-type electrode formed on the p-type transparent electrode; an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time; and wherein a top surface of the p-type GaN layer of the luminous pillars has convex surfaces formed through the CMP process.
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2. A nitride micro LED (Light Emitting Diode) with high brightness, comprising:
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a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, and active layer 3 formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars; a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars; a pair of DBR (Distributed Bragg Reflectors) layers formed on a top surface of the transparent electrode and a bottom surface of the substrate, respectively; a p-type electrode formed on the p-type transparent electrode; and an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time.
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3. A nitride micro LED (Light Emitting Diode) with high brightness, comprising:
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a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, and active layer formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer, wherein the luminous pillars have side surfaces that are formed obliquely; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars; a DBR layer made of ZrO2/SiO2 or HfO2/SiO2 and formed below the gap filling material within gaps between the luminous pillars; a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars; a p-type electrode formed on the p-type transparent electrode; an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time.
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Specification
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Current AssigneeSang-Kyu Kang
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Original AssigneeSang-Kyu Kang
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InventorsKang, Sang-Kyu
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Primary Examiner(s)Parker; Kenneth A
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Assistant Examiner(s)Ho; Anthony
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Application NumberUS10/567,482Publication NumberTime in Patent Office2,244 DaysField of Search257/79, 257/85, 257/90, 257/94, 257/103US Class Current257/88CPC Class CodesH01L 33/08 with a plurality of light e...H01L 33/32 containing nitrogenH01L 33/42 Transparent materialsH01L 33/44 characterised by the coatin...
