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Nitride-based semiconductor light emitting device and method for fabricating same

  • US 7,595,514 B2
  • Filed: 04/14/2008
  • Issued: 09/29/2009
  • Est. Priority Date: 07/19/2007
  • Status: Expired due to Fees
First Claim
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1. A nitride-based semiconductor light emitting device, comprising:

  • a substrate;

    a nitride-based multi-layered structure epitaxially formed on the substrate, the multi-layered structure including a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written, the second-type layer and the active layer cooperatively forming a developed mesa structure, the first-type layer having an exposed portion, the mesa structure having a top surface facing away from the substrate and a plurality of side surfaces adjoining the top surface, wherein a crystal growth orientation of the multi-layered structure intersects with <

    0001>

    crystal orientation thereof, and the top surface and the side surfaces are roughened surfaces;

    a first-type electrode formed on the exposed portion and brought into ohmic contact with the first-type layer; and

    a second-type electrode formed on the top surface and brought into ohmic contact with the second-type layer.

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