VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system

• US 7,596,163 B2
• Filed: 05/15/2007
• Issued: 09/29/2009
• Est. Priority Date: 08/31/2006
• Status: Active Grant

• Current Assignee: Fujifilm Business Innovation Corp. (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Yamamoto, Masateru, Kondo, Takashi, Yoshikawa, Masahiro
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): Nguyen; Phillip
• Application Number:
  US11/803,468
• Publication Number:
  US 20080056323A1
• Time in Patent Office: 868 Days
• Field of Search: 372/50.124, 372/43.01
• US Class Current: 372/50.124
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18375 based on metal reflectors
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/18383 with periodic active regions at nodes or maxima of light intensity
• CPC Class Codes: H01S 5/18394 Apertures, e.g. defined by the shape of the upper electrode
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.

Claims

1. A vertical-cavity surface-emitting laser diode (VCSEL) comprising:

a substrate;

a first semiconductor multilayer of a first conductivity-type;

an active layer;

a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multilayer;

a contact layer;

each of the layers being stacked on the substrate, and

a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light;

and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

, the contact layer covering the entire surface of the top layer.

2. The VCSEL according to claim 1, wherein the second semiconductor multilayer comprises a plurality of layers being a plurality of pairs of a first semiconductor layer having a first refractive index and a second semiconductor layer having a second refractive index, and optical thickness T that is sum of the thickness of a first semiconductor layer being a top layer of the second semiconductor multilayer and the thickness of the contact layer is smaller than λ

/4.

3. The VCSEL according to claim 1, wherein the difference between the bandgap energy of a first semiconductor layer being the top layer among first semiconductor layers being included in the second semiconductor multilayer, and the bandgap energy of the active layer is equal to or greater than 0.1 electron volts (eV) and equal to or smaller than 0.3 electron volts.

4. The VCSEL according to claim 2, the first and second semiconductor layers are made of AlGaAs having different Al-composition, and the contact layer is made of GaAs.

5. The VCSEL according to claim 2, the Al-composition of the first semiconductor layer is smaller than the Al-composition of the second semiconductor layer.

6. The VCSEL according to claim 1, wherein the metal layer is made of gold or a stacked layer of titanium and gold.

7. The VCSEL according to claim 1, further comprising a current confining layer between the contact layer and the substrate, the current confining layer comprising a high resistance region and a conductive region surrounded by the high resistance region, and the opening portion of the metal layer is about 0 to 3 μ

m smaller than the diameter of the conductive region.

8. The VCSEL according to claim 7, further comprising a post on the substrate, the post comprising at least a metal layer, a contact layer, a second semiconductor multilayer, and a current confining layer, and a high resistance region of the current confining layer being an oxidized region that is oxidized from a side surface of the post.

9. A module comprising:

a VCSEL; and

an optical member to be implemented,

the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

.

10. A light sending device comprising:

a module; and

a sending component that sends laser light emitted from the module by means of an optical medium,

the module comprising a VCSEL and an optical member to be implemented,

the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

.

11. An optical spatial transmission device comprising:

a module; and

a transmission component that spatially transmits light emitted from the module,

the module comprising a VCSEL and an optical member to be implemented,

the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

.

12. A light sending system comprising:

a module; and

a sending component that sends laser light emitted from the module,

the module comprising a VCSEL and an optical member to be implemented,

the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

.

13. An optical spatial transmission system comprising:

a module; and

a transmission component that spatially transmits light emitted from the module,

the module comprising a VCSEL and an optical member to be implemented,

the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ

, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

.

14. A method for manufacturing a vertical-cavity surface-emitting laser diode (VCSEL) comprising:

forming a first semiconductor multilayer of at least a first conductivity-type, on a substrate;

forming an active region on the first semiconductor multilayer;

forming a second semiconductor multilayer of a second conductivity-type on the active region such that the thickness of a top layer of the second semiconductor multilayer being thinner than the thickness of other layers of the second semiconductor multilayer;

forming a contact layer on the second conductivity-type on the second semiconductor multilayer, such that optical thickness T being sum of the thickness of the top layer and the contact layer covering the entire surface of the top layer is in a range from about 0.193 λ

to about 0.197 λ and

is out of a range from about 0.153 λ

to about 0.157 λ

; and

forming a metal layer on the contact layer, the metal layer including an opening portion that defines a region that emits laser light.

15. The method according to claim 14, wherein the second semiconductor multilayer comprising a plurality of semiconductor layers of a plurality of pairs of a first semiconductor layer having a first refractive index and a second semiconductor layer having a second refractive index, and optical thickness T of the thickness of a first semiconductor layer being a top layer of the second semiconductor multilayer and the thickness of the contact layer is smaller than λ

/4, and optical thickness of each of first semiconductor layers other than the first semiconductor layer being the top layer and the second semiconductor layers is equal to λ

/4.

16. The method according to claim 14, wherein the difference between the bandgap energy of the first semiconductor layer being the top layer of the second semiconductor layer among first semiconductor layers being included in the second semiconductor multilayer, and the bandgap energy of the active layer is equal to or greater than 0.1 electron volts (eV) and equal to or smaller than 0.3 electron volts.

17. The method according to claim 15, wherein the first and second semiconductor layer are made of AlGaAs having different Al-composition, and the contact layer is made of GaAs.

18. The method according to claim 17, the Al-composition of the first semiconductor layer is smaller than the Al-composition of the second semiconductor layer.

19. The method according to claim 14, wherein the metal layer is made of gold or a stacked layer of titanium and gold.

20. The method according to claim 14, further comprising;

forming a current confining layer between the substrate and the contact layer,

forming a post on the substrate by etching the semiconductor layers on the substrate, and

oxidizing outer periphery of the current confining layer from a side surface of the post, wherein the opening portion of the metal layer being about 0 to 3 μ

m smaller than the diameter of the conductive region surrounded by the oxidized region of the current confining layer.