VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system
First Claim
1. A vertical-cavity surface-emitting laser diode (VCSEL) comprising:
- a substrate;
a first semiconductor multilayer of a first conductivity-type;
an active layer;
a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multilayer;
a contact layer;
each of the layers being stacked on the substrate, anda metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light;
and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
, the contact layer covering the entire surface of the top layer.
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Accused Products
Abstract
A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.
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Citations
20 Claims
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1. A vertical-cavity surface-emitting laser diode (VCSEL) comprising:
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a substrate; a first semiconductor multilayer of a first conductivity-type; an active layer; a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multilayer; a contact layer; each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light; and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
, the contact layer covering the entire surface of the top layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A module comprising:
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a VCSEL; and an optical member to be implemented, the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
.
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10. A light sending device comprising:
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a module; and a sending component that sends laser light emitted from the module by means of an optical medium, the module comprising a VCSEL and an optical member to be implemented, the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
.
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11. An optical spatial transmission device comprising:
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a module; and a transmission component that spatially transmits light emitted from the module, the module comprising a VCSEL and an optical member to be implemented, the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
.
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12. A light sending system comprising:
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a module; and a sending component that sends laser light emitted from the module, the module comprising a VCSEL and an optical member to be implemented, the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
.
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13. An optical spatial transmission system comprising:
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a module; and a transmission component that spatially transmits light emitted from the module, the module comprising a VCSEL and an optical member to be implemented, the VCSEL comprising a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, the second semiconductor multilayer constituting a resonator together with the active layer and the first semiconductor multiplayer, a contact layer, each of the layers being stacked on the substrate, and a metal layer formed on the contact layer, the metal layer including an opening portion that defines a region that emits laser light, and when oscillation wavelength of the laser light is λ
, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
.
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14. A method for manufacturing a vertical-cavity surface-emitting laser diode (VCSEL) comprising:
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forming a first semiconductor multilayer of at least a first conductivity-type, on a substrate; forming an active region on the first semiconductor multilayer; forming a second semiconductor multilayer of a second conductivity-type on the active region such that the thickness of a top layer of the second semiconductor multilayer being thinner than the thickness of other layers of the second semiconductor multilayer; forming a contact layer on the second conductivity-type on the second semiconductor multilayer, such that optical thickness T being sum of the thickness of the top layer and the contact layer covering the entire surface of the top layer is in a range from about 0.193 λ
to about 0.197 λ and
is out of a range from about 0.153 λ
to about 0.157 λ
; andforming a metal layer on the contact layer, the metal layer including an opening portion that defines a region that emits laser light. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification