Storage subsystem with configurable buffer

• US 7,596,643 B2
• Filed: 02/07/2007
• Issued: 09/29/2009
• Est. Priority Date: 02/07/2007
• Status: Active Grant

• Current Assignee: JP Morgan Chase Bank, N.A. (JP Morgan Chase & Co)
• Original Assignee: SiliconSystems, Inc. (Western Digital Corporation)
• Inventors: Merry, David E. Jr., Diggs, Mark S.
• Primary Examiner(s): Tsai; Henry W. H.
• Assistant Examiner(s): RHU, KRIS M
• Application Number:
  US11/672,435
• Publication Number:
  US 20080189452A1
• Time in Patent Office: 965 Days
• Field of Search: None
• US Class Current: 710/56
• CPC Class Codes: G06F 3/061 Improving I/O performance
• CPC Class Codes: G06F 3/0656 Data buffering arrangements
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G11B 19/044 by using a data buffer

Abstract

A storage subsystem includes a variable-size write buffer that temporarily stores write data received from a host system. The storage subsystem is capable of adjusting the size of the write buffer so as to vary both the performance (e.g., sustained write speed) of the storage subsystem and a risk of data loss. In one embodiment, the storage subsystem implements a command set that enables the host system to directly control the size of the write buffer. The storage subsystem may additionally or alternatively be capable of adjusting the size of the write buffer based on monitored operating conditions, such as the temperature, the stability/consistency of a power signal received from the host system, and/or the elapsed time since the storage subsystem was last powered up.

Claims

1. A storage subsystem, comprising:

a controller coupled to non-volatile storage, said controller capable of writing data to, and reading data from, the non-volatile storage in response to commands received by the storage subsystem from a host system; and

a volatile memory coupled to the controller, wherein the controller is configured to implement a write buffer in said volatile memory to buffer write data received from the host system on write operations, and to transfer said write data from the write buffer to the non-volatile storage, said buffer memory being capable of receiving data at a higher rate than the non-volatile storage, such that the storage subsystem is capable of receiving write data from the host system at a rate that exceeds a write speed of the non-volatile storage;

wherein the controller is configured to adjust a size of the write buffer in response to commands from the host system so as to vary both a sustained write speed of the storage subsystem and a risk of data loss, such that the size of the write buffer is decreased when said write data is determined to be critical and is increased when said write data is determined to be non-critical.

2. The storage subsystem of claim 1, wherein the controller implements a command set that enables the host system to control the size of the write buffer.

3. The storage subsystem of claim 2, wherein the command set includes standard ATA storage access commands, and includes a non-standard command that enables the host to specify the size of the write buffer.

4. The storage subsystem of claim 2, wherein the command set enables the host system to allocate a relatively large quantity of said buffer memory to individual write operations to increase a sustained write speed of the storage subsystem, and enables the host system to allocate a relatively small quantity of said buffer memory to individual write operations to reduce a risk of data loss.

5. The storage subsystem of claim 2, in combination with a host system configured to cause the controller to vary the size of the write buffer based on a type of data being written to the storage subsystem.

6. The storage subsystem of claim 1, wherein the controller implements a command set that enables the host system to place the storage subsystem into a mode in which the storage subsystem automatically adjusts the size of the write buffer.

7. The storage subsystem of claim 6, wherein the controller automatically adjusts the size of said write buffer based, at least in part, on attributes of write commands received from the host system, the attributes comprising a sector count value.

8. The storage subsystem of claim 6, wherein the command set additionally enables the host system to cause the controller to subdivide the write buffer into multiple blocks that are used to concurrently to handle write operations.

9. The storage subsystem of claim 1, wherein the storage subsystem includes a temperature sensor, and the controller automatically adjusts the size of said write buffer based, at least in part, on a temperature reading from said temperature sensor.

10. The storage subsystem of claim 1, wherein the storage subsystem collects usage statistics reflective of the wear level of the non-volatile storage, and takes said usage statistics into consideration in selecting the size of the write buffer by:

calculating a likelihood of failure of the non-volatile storage from the collected usage statistics reflective of the wear level; and

decreasing the size of the write buffer when the calculated likelihood of failure exceeds a threshold.

11. The storage subsystem of claim 1, wherein the controller automatically adjusts the size of said write buffer based, at least in part, on a consistency of a power signal received from the host system, such that the size of the write buffer is decreased when the supply noise of the power signal exceeds a noise threshold or when the supply level of the power signal drops below a supply level threshold.

12. The storage subsystem of claim 1, wherein the controller automatically adjusts the size of said write buffer based, at least in part, on a length of time that has elapsed since the storage subsystem was last powered up.

13. The storage subsystem of claim 1, wherein the non-volatile storage comprises non-volatile solid state memory devices.

14. The storage subsystem as in claim 1, wherein the controller, non-volatile storage, and volatile memory are housed within a housing that complies with a standard form factor used for memory cards.

15. The storage subsystem as in claim 14, wherein the standard form factor is one of the following:

CompactFlash, SecureDigital, PCMCIA, MultiMediaCard, SmartMedia, Memory Stick.

16. The storage subsystem of claim 1, wherein the storage subsystem collects usage statistics reflective of the ECC errors detected in the non-volatile storage, and takes said usage statistics into consideration in selecting the size of the write buffer by:

calculating a likelihood of failure of the non-volatile storage from the collected usage statistics reflective of the ECC errors detected in the non-volatile storage; and

decreasing the size of the write buffer when the calculated likelihood of failure exceeds a threshold.

17. A method of handling write operations from a host to a storage subsystem, the method comprising:

receiving, at the storage subsystem, write data from the host system, and storing the write data in a variable-size write buffer implemented in a volatile memory of the storage subsystem;

moving the write data from the write buffer to non-volatile storage of the storage subsystem, and signaling to the host system when the write buffer is available to receive additional write data; and

adjusting a size of the write buffer over time to vary a sustained write speed of the storage subsystem and an associated risk of data loss, so that the size is decreased when the write data is determined to be critical and the size is increased when the write data is determined to be non-critical.

18. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed in response to receiving a non-standard command from the host system, said non-standard command specifying the size of the write buffer.

19. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed by the storage subsystem based, at least in part, on a temperature reading.

20. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed by the storage subsystem based, at least in part, on a consistency of a power signal received from the host system, such that the size of the write buffer is decreased when the supply noise of the power signal exceeds a noise threshold or when the supply level of the power signal drops below a supply level threshold.

21. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed by the storage subsystem based, at least in part, on an elapsed time since the storage subsystem was last powered up.

22. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed based, at least in part, on a type of data being written to the storage subsystem.

23. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed based, at least in part, on an output of a vibration sensor.

24. The method of claim 17, wherein the step of adjusting the size of the write buffer is performed based, at least in part, on data regarding a current wear level of the non-volatile storage, such that the size of the write buffer is decreased when the current wear level exceeds a threshold.

25. The method of claim 17, wherein the host system determines whether the write data is critical or non-critical.