Fabrication process of semiconductor device and polishing method

• US 7,597,606 B2
• Filed: 01/18/2008
• Issued: 10/06/2009
• Est. Priority Date: 03/30/2005
• Status: Expired due to Fees

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Microelectronics Limited (Fujitsu Limited)
• Inventors: Shirasu, Tetsuya
• Primary Examiner(s): Morgan; Eileen P.
• Application Number:
  US12/010,029
• Publication Number:
  US 20080146128A1
• Time in Patent Office: 627 Days
• Field of Search: 451/5, 451/10, 451/11, 451/56, 451/57, 451/65, 451/72, 451/443, 438/691
• US Class Current: 451/5
• CPC Class Codes: B22F 2998/00 Supplementary information concerning processes or compositions relating to powder metallurgy
• CPC Class Codes: B22F 7/08 with one or more parts not made from powder B22F7/062 takes precedence
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• CPC Class Codes: C22C 26/00 Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
• CPC Class Codes: C23F 3/04 Heavy metals
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation

Abstract

A method of fabricating a semiconductor device includes a polishing process of a substrate, wherein the polishing process includes the steps of applying a chemical mechanical polishing process to the substrate on a polishing pad while using slurry, and conditions a surface of the polishing pad, the conditioning step including the step of grinding the surface of said polishing pad by at least first and second conditioning disks of respective, different surface states.

Claims

1. A polishing apparatus, comprising:

a polishing platen rotating and carrying a polishing pad thereon;

a substrate carrier holding a substrate to be processed and urging said substrate to said polishing pad while rotating said substrate;

a slurry supply mechanism supplying slurry to said polishing pad; and

first and second conditioners each holding a conditioning disk for conditioning said polishing pad, said first and second conditioners urge said conditioning disks to said polishing pad while rotating said conditioning disks;

wherein said first and second conditioners have thereon diamond abrasive grains, and a surface roughness of said first conditioner is different than a surface roughness of said second conditioner,

wherein said polishing apparatus further includes a control unit, said control unit controlling said first and second conditioners, in said polishing platen, such that said polishing pad mounted upon said polishing platen is applied with conditioning repeatedly with said first conditioner during each time a substrate is polished and such that said polishing pad is applied with conditioning with said second conditioner intermittently when a total conditioning time of said first conditioner has reached a predetermined time.

2. The polishing apparatus as claimed in claim 1, wherein said polishing apparatus further includes a plurality of polishing platens.

3. The polishing apparatus as claimed in claim 2, wherein, said first conditioner cooperates with one of said polishing platens, and said second conditioner cooperates with a plurality of polishing platens.

4. The polishing apparatus as claimed in claim 1, wherein each of said conditioners carries a plurality of conditioning disks.

5. A polishing apparatus, comprising:

one or more polishing platens rotated and carrying respective polishing pads thereon;

one or more substrate carriers for holding respective substrates to be processed, each of said one or more substrate carriers urging a substrate held thereon to a corresponding polishing pad while rotating said substrate;

a slurry supply mechanism for supplying slurry to said one or more polishing pads, and

at least two conditioners cooperating with each of said one or more polishing pads, said at least two conditioners holding respective conditioning disks for conditioning said cooperating polishing pad, said at least two conditioners urging said respective conditioning disks to said cooperating polishing pad while rotating said conditioning disks,

wherein said at least two conditioners have thereon diamond abrasive grains, said at least two conditioners individually being a first type or a second type, and a surface roughness of said conditioner of the first type is different than a surface roughness of said conditioner of the second type, and

wherein each of said one or more polishing pads is conditioned by a cooperating conditioner of the first type and a cooperating conditioner of the second type,

said polishing apparatus further including a control unit, said control unit controlling said at least two conditioners, in each of said one or more polishing platens, such that a polishing pad mounted upon said polishing platen is applied with conditioning repeatedly with said conditioner of said first type during each time a substrate is polished and such that said polishing pad is applied with conditioning with said conditioner of said second type intermittently when a total conditioning time of said first conditioner has reached a predetermined time.

6. The polishing apparatus as claimed in claim 5, wherein each of said one or more polishing platens has two corresponding conditioners.

7. The polishing apparatus as claimed in claim 5, wherein one of said at least two conditioners cooperates with one or more polishing platens.

8. The polishing apparatus as claimed in claim 5, wherein said one or more polishing platens have a corresponding conditioner of the first type, and

wherein said conditioner of the second type cooperates with more than one polishing platen.

9. The polishing apparatus as claimed in claim 5, wherein each of said at least two conditioners carries a plurality of conditioning disks.