Method and system for enhanced lithographic alignment

• US 7,598,024 B2
• Filed: 03/08/2006
• Issued: 10/06/2009
• Est. Priority Date: 03/08/2006
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Musa, Sami, Lalbahadoersing, Sanjaysingh
• Primary Examiner(s): Young; Christopher G
• Application Number:
  US11/370,159
• Publication Number:
  US 20070212652A1
• Time in Patent Office: 1,308 Days
• Field of Search: 430/22, 430/313, 430/314, 430/328, 257/797, 438/401, 438/975
• US Class Current: 430/314
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark
• CPC Class Codes: G03F 9/708 Mark formation
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/975 Substrate or mask aligning feature

Abstract

A method for alignment mark preservation includes a step of preparing a lower alignment mark structure on a substrate. In one configuration of the invention, the alignment mark structure includes a lower trench. In a further step, a hard mask coating is applied to a substrate that includes the alignment marks. Preferably, the hard mask material is an amorphous carbon material. In a further step, a selected portion of the hard mask located above the lower alignment mark structure is exposed to a dose of radiation. In one aspect of the invention, the surface of regions of the hard mask coating that receive the dose of radiation become elevated with respect to other regions of the hard mask surface. For those elevated regions of the hard mask that are aligned with an underlying alignment mark trench, the elevated regions serve as an alignment mark that preserves the original horizontal position of the underlying alignment mark.

Claims

1. A method for preserving an alignment mark, comprising;

preparing a lower alignment mark structure above a substrate, said lower alignment mark structure defining a lower trench region;

applying a hard mask coating above the substrate, said hard mask coating having a top surface;

exposing portions of the hard mask coating to a dose of radiation so as to elevate a top surface region of the hard mask coating located above the lower trench region in the lower alignment mark structure, such that said top surface region is higher than portions of the top surface adjacent to the top surface region of the hard mask coating.

2. The method of claim 1, wherein the hard mask coating is amorphous carbon.

3. The method of claim 2, wherein the exposed portions of the hard mask layer are substantially graphitized.

4. The method of claim 2, further comprising depositing a coating layer on the lower alignment mark structure before applying the hard mask coating.

5. The method of claim 4, wherein the coating layer retains an upper trench region located above the trench region of the lower alignment mark.

6. The method of claim 5, wherein the hard mask layer is substantially planarizing, wherein a thickness of the hard mask layer above the upper trench region is greater than in adjacent regions before exposure of the hard mask to the dose of radiation.

7. The method of claim 2, wherein a thickness of the hard mask coating is about 50 to 1000 nm.

8. The method of claim 1, wherein the coating layer is a conformal coating.

9. A process for self-aligned resurrection of an alignment mark feature, comprising:

defining a lower trench region in a lower alignment mark that is disposed on a substrate;

depositing a coating layer over the lower alignment mark;

providing a hard mask layer on a top surface of the coating layer; and

exposing portions of the hard mask layer to a dose of radiation, wherein portions of the hard mask layer located above the trench region become elevated with respect to adjacent portions of the hard mask layer.

10. The method of claim 9, wherein the hard mask coating is amorphous carbon.

11. The method of claim 10, wherein a thickness of the exposed portions of the amorphous carbon is about 10 to 30 percent greater than a thickness of unexposed portions of the amorphous carbon.

12. The method of claim 10, wherein the coating layer includes an upper trench region located above the lower trench region of the lower alignment mark.

13. The method of claim 12, wherein a hard mask layer height in regions located above the upper trench region is about 10 to 100 nm greater than a hard mask layer height in adjacent regions.

14. The method of claim 9, wherein the hard mask layer is substantially planarizing, wherein a thickness of the hard mask layer above the upper trench region is about 10 to 50 percent greater than in adjacent regions before exposure of the hard mask to the dose of radiation.

15. The method of claim 9, wherein a thickness of the hard mask coating is about 50 to 1000 nm.

16. The method of claim 9, wherein the defining the lower trench region comprises;

providing a substrate layer;

depositing an additional layer on the substrate layer; and

etching a selected portion of the additional layer.

17. A self-aligned alignment mark structure, comprising:

a lower alignment mark structure disposed on a substrate and including a lower trench region and mesa regions;

a coating layer disposed on the lower trench region and mesa regions, and including an upper trench region; and

an upper alignment mark structure that includes an elevated portion whose horizontal position corresponds to that of the lower trench region, the elevated portion formed by selective expansion of a portion of a hard mask layer.

18. The self-aligned alignment mark structure of claim 17, wherein the hard mask layer is amorphous carbon.

19. The self-aligned alignment mark structure of claim 18, wherein a thickness of the hard mask layer is about 50 to 1000 nm.

20. The self-aligned alignment mark structure of claim 18, wherein the lower alignment mark structure comprises a plurality of lower trench and mesa regions, and wherein the upper alignment mark structure comprises a plurality of elevated portions that correspond to respective lower trench regions.

21. The self-aligned alignment marks structure of claim 20, wherein the hard mask layer is substantially planarizing, wherein a thickness of the hard mask layer above the upper trench region is about 10 to 50 percent greater than in adjacent regions before exposure of the hard mask to the dose of radiation.

22. The self-aligned alignment mark structure of claim 20, wherein the plurality of elevated portions are imageable in an alignment tool.

23. A method for restoring an alignment mark, comprising:

providing a substrate layer;

providing a mesa layer on top of the substrate layer;

etching a selected portion of the mesa layer to define a lower alignment mark having a lower trench region;

depositing a coating layer above the lower alignment mark, the coating layer being substantially conformal, wherein an upper trench region is formed in an upper portion of the coating layer above the lower trench region;

depositing an amorphous carbon layer on the coating layer; and

exposing portions of the amorphous carbon layer to a dose of radiation so as to elevate a top surface region of the amorphous carbon layer located above the lower trench region in the lower alignment mark, such that said top surface region is higher than adjacent portions of the top surface of the amorphous carbon layer, wherein said top surface region comprises an upper alignment mark located at a same horizontal position as the lower alignment mark.