Optical semiconductor device and fabrication method therefor
First Claim
1. A fabrication method for an optical semiconductor device, comprising:
- forming a current block layer on a semiconductor substrate;
forming a groove by removing the current block layer at an opening of a mask;
forming a first cladding layer including a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask so that the projection is positioned above the current block layer;
forming an active layer on the two inclined faces of the first cladding layer so that the current block layer is positioned on the opposite sides of the active layer; and
removing the mask and burying the active layer with a second cladding layer.
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Abstract
An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the steps of forming a semiconductor layer on a semiconductor substrate, forming a groove by removing the semiconductor layer at an opening of a mask, forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask, forming an active layer on the two inclined faces of the first clad layer, and removing the mask and burying the active layer with a second clad layer.
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Citations
16 Claims
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1. A fabrication method for an optical semiconductor device, comprising:
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forming a current block layer on a semiconductor substrate; forming a groove by removing the current block layer at an opening of a mask; forming a first cladding layer including a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask so that the projection is positioned above the current block layer; forming an active layer on the two inclined faces of the first cladding layer so that the current block layer is positioned on the opposite sides of the active layer; and removing the mask and burying the active layer with a second cladding layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An optical semiconductor device, comprising:
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a semiconductor substrate; a cladding layer formed on said semiconductor substrate and including a projection having two symmetrical inclined faces; an active layer formed only on the two inclined faces of said cladding layer; and a current block layer formed in a contacting relationship with side faces being below the two inclined faces of said cladding layer and having an equal thickness at portions in the proximity of contacting portions thereof with said cladding layer and any other portion thereof than the portions; wherein said projection is positioned above said current block layer and said current block layer is positioned on the opposite sides of said active layer. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification