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Plasma-enhanced ALD of tantalum nitride films

  • US 7,598,170 B2
  • Filed: 01/26/2007
  • Issued: 10/06/2009
  • Est. Priority Date: 01/26/2007
  • Status: Active Grant
First Claim
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1. An atomic layer deposition (ALD) process for growing a tantalum nitride film over a substrate in a reaction space, comprising the sequential steps of:

  • a) feeding a vapor-phase pulse of a tantalum source chemical into the reaction space;

    b) removing excess tantalum source chemical and any reaction by-products from the reaction space;

    c) feeding a vapor-phase pulse of a nitrogen source chemical into the reaction space;

    d) removing excess nitrogen source chemical and any reaction by-products from the reaction space;

    e) feeding a vapor-phase pulse of plasma-excited species of hydrogen (H2) into the reaction space; and

    f) removing excess plasma-excited species of hydrogen and any reaction by-products from the reaction space.

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