Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a substrate; and
a semiconductor element including an oxide semiconductor thin film layer of zinc oxide, which is formed on the substrate, and at least a portion of which includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å
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Abstract
A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002 of at least 2.619 Å.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a substrate; and a semiconductor element including an oxide semiconductor thin film layer of zinc oxide, which is formed on the substrate, and at least a portion of which includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å
. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a substrate; an oxide semiconductor thin film layer of zinc oxides, which is formed on the substrate, and at least a portion of which includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å
; andcontact layers of zinc oxide, which are formed in contact with the oxide semiconductor thin film layer, and at least a portion of each of which includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d002 that is smaller than the lattice spacing d002 of the (002) lattice planes of the oxide semiconductor thin film layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a substrate; and an oxide semiconductor thin film layer of zinc oxide which is formed on the substrate, and at least a portion of which includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å
;wherein the oxide semiconductor thin film layer includes a first region of intrinsic zinc oxide and second regions of zinc oxide doped with ions acting as donors to zinc oxide, and wherein the second regions have a lower resistance than a resistance of the first regions. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification