Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
First Claim
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1. A static random access memory(SRAM), comprising:
- two semiconductor-type field effect transistors (FETs), each FET having a semiconductor drain region and a semiconductor source region of a first type of semiconductor material, and each FET having a semiconductor channel region positioned between respective drain and source regions, said channel region made of a second type of semiconductor material, each FET further having a gate node in proximity to a respective channel region so as to be able to modulate the conductivity of the channel by electrically stimulating the gate, wherein the two semiconductor-type FETs are cross-coupled so that gate of one FET connects to the drain or source of the other; and
two nanotube FETs (NTFETs), each having a channel region made of non-woven nanotube fabric, connected to a respective source and drain region of a corresponding NTFET, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
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Abstract
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
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6 Claims
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1. A static random access memory(SRAM), comprising:
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two semiconductor-type field effect transistors (FETs), each FET having a semiconductor drain region and a semiconductor source region of a first type of semiconductor material, and each FET having a semiconductor channel region positioned between respective drain and source regions, said channel region made of a second type of semiconductor material, each FET further having a gate node in proximity to a respective channel region so as to be able to modulate the conductivity of the channel by electrically stimulating the gate, wherein the two semiconductor-type FETs are cross-coupled so that gate of one FET connects to the drain or source of the other; and two nanotube FETs (NTFETs), each having a channel region made of non-woven nanotube fabric, connected to a respective source and drain region of a corresponding NTFET, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification