Nonvolatile memory cell, storage device and nonvolatile logic circuit
First Claim
Patent Images
1. A memory cell comprising:
- a pair of inverters including a pair of field effect transistors and a pair of nonvolatile variable resistance elements connected to drain terminals of the transistors and having cross-coupled input/output terminals; and
a power supply line connected to other terminals of the nonvolatile variable resistance elements and supplied with a control voltage, said control voltage controlling data storage within the memory cell when power to said memory cell is turned off.
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Abstract
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other terminals of the variable resistance elements are connected to a power supply line to thereby form a memory cell. By controlling the voltage supplied to this power supply line, data of the memory cell immediately before turning off the power is stored in it when the power is turned off.
30 Citations
20 Claims
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1. A memory cell comprising:
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a pair of inverters including a pair of field effect transistors and a pair of nonvolatile variable resistance elements connected to drain terminals of the transistors and having cross-coupled input/output terminals; and a power supply line connected to other terminals of the nonvolatile variable resistance elements and supplied with a control voltage, said control voltage controlling data storage within the memory cell when power to said memory cell is turned off. - View Dependent Claims (2)
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3. A memory cell comprising:
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a cross coupled pair of inverters including N-channel field effect transistors and P-channel field effect transistors serially connected, a pair of nonvolatile variable resistance elements connected to storage nodes of the cross coupled pair of inverters, and a power supply line connected to first terminals of the nonvolatile variable resistance elements and to which a control voltage is supplied, said control voltage controlling data storage within the memory cell when power to said memory cell is turned off. - View Dependent Claims (4)
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5. A storage device comprising:
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memory cells, each having a pair of inverters including a pair of field effect transistors and a pair of nonvolatile variable resistance element connected to drain terminals of the transistors and having cross-coupled input/output terminals and a power supply line connected to other terminals of the nonvolatile variable resistance elements and supplied with a control voltage, arranged in a matrix, a word line commonly connecting gate terminals of access transistors of the memory cells in a row direction, a pair of bit lines commonly connecting drain terminals of the access transistors in a column direction, and a control circuit supplying a control voltage to the power supply line commonly connected to first terminals of the variable resistance elements for changing characteristics of the variable resistance elements, wherein said control voltage controls data storage within the memory cell when power to said memory cell is turned off. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A storage device comprising:
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memory cells, each having a cross coupled pair of inverters including N-channel field effect transistors and P-channel field effect transistors serially connected, a pair of;
nonvolatile variable resistance elements connected to storage nodes of the cross coupled pair of inverters, and a power supply line connected to first ends of the nonvolatile variable resistance, arranged in a matrix, a word line commonly connecting gate terminals of access transistors of the memory cells in a row direction, a pair of bit lines commonly connecting drain terminals of the access transistors in a column direction, and a control circuit supplying a control voltage to the power supply line commonly connected to first ends of the variable resistance elements for changing characteristics of the variable resistance elements,wherein said control voltage controls data storage within the memory cell when power to said memory cell is turned off. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A nonvolatile logic circuit comprising:
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a flip-flop circuit including a pair of inverters with output terminals cross coupled with each other'"'"'s input terminals, and an additional circuit having a pair of nonvolatile variable resistance elements with first terminals connected to storage nodes of the flip-flop circuit and a second power supply line to which other terminals of the nonvolatile variable resistance elements are connected and provided separate from a first power supply line of the inverters to which a control voltage is supplied and driving the second power supply line by the control voltage so as to store data of the flip-flop circuit in the nonvolatile variable resistance elements when the first power supply line is turned off, wherein said control voltage controlling data storage within the memory cell when power to said memory cell is turned off. - View Dependent Claims (20)
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Specification