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Method of compensating photomask data for the effects of etch and lithography processes

  • US 7,600,212 B2
  • Filed: 10/02/2006
  • Issued: 10/06/2009
  • Est. Priority Date: 10/03/2005
  • Status: Active Grant
First Claim
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1. A method of synthesizing a photomask data set from a given target layout, comprising the steps of:

  • a) providing a set of target polygons for said target layout;

    b) fitting a smooth curve to a target polygon of said set of target polygons by a computer, the curve having a set of etch-target points;

    c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises calculating how much of a region above a wafer is visible from a point on the sidewall of an etched feature in the wafer; and

    d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

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