Method of compensating photomask data for the effects of etch and lithography processes

• US 7,600,212 B2
• Filed: 10/02/2006
• Issued: 10/06/2009
• Est. Priority Date: 10/03/2005
• Status: Active Grant

• Current Assignee: Cadence Design Systems Incorporated (Cadence Group)
• Original Assignee: Cadence Design Systems Incorporated (Cadence Group)
• Inventors: Cao, Xuelong, Carrero, Jesus, Yenikaya, Bayram, Sezginer, Abdurrahman, Zach, Franz X., Percin, Gokhan
• Primary Examiner(s): GARBOWSKI, LEIGH M
• Application Number:
  US11/541,921
• Publication Number:
  US 20070143733A1
• Time in Patent Office: 1,100 Days
• Field of Search: None
• US Class Current: 716/50
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

Claims

1. A method of synthesizing a photomask data set from a given target layout, comprising the steps of:

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons by a computer, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises calculating how much of a region above a wafer is visible from a point on the sidewall of an etched feature in the wafer; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

2. The method as defined by claim 1, wherein said target layout is applicable to a region of a chip, and further compromising repeating the method for at least one further region of the chip.

3. The method as defined by claim 1, wherein said steps (b) and (c) are performed for other polygons of said set of polygons.

4. The method as defined by claim 3, wherein said model of an etch process of step (c) has adjustable parameters, the method further comprising:

printing a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measuring critical dimensions of the photoresist pattern;

etching a pattern into a layer on a wafer;

measuring critical dimensions of the etched pattern; and

selecting the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

5. The method as defined by claim 1, wherein said smooth curve of step (b) substantially matches the target polygon, except at its vertices.

6. The method as defined by claim 5, wherein said smooth curve of step (b) comprises an etch target curve on which said etch target points lie.

7. The method as defined by claim 1, wherein said model of an etch process of step (c) comprises calculating a convolution of a point-spread-function with a photoresist pattern density.

8. The method as defined by claim 1, wherein said model of an etch process of step (c) has adjustable parameters, the method further comprising:

printing a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measuring critical dimensions of the photoresist pattern;

etching a pattern into a layer on a wafer;

measuring critical dimensions of the etched pattern; and

selecting the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

9. The method as defined by claim 8, wherein said selecting step further comprises substantially minimizing a weighted sum of squares of differences between predictions of the model of the etch process and measured critical dimensions.

10. A photomask made using the method defined by claim 8.

11. The method as defined by claim 1, wherein said step (d) of synthesizing a photomask data set further comprises calculating edge placement errors at a plurality of lithography target points.

12. The method as defined by claim 11, wherein said step of synthesizing a photomask further comprises calculating how much a resist edge is displaced in response to a change in an exposure dose or defocus.

13. The method as defined by claim 1, wherein said step (c) utilizes an algorithm selected from the group consisting of a Overmars-Welzl Algorithm, a Ghosh-Mount Algorithm, and a Lee Algorithm, for constructing a visibility graph in a plane.

14. A photomask made using the method defined by claim 1.

15. A method of synthesizing a photomask data set from a given target layout, comprising the steps of:

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons by a computer, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points and wherein synthesizing a photomask data set further comprises;

calculating an image intensity at a plurality of lithography target points according to the model of the lithography process;

calculating a figure-of-demerit comprising a sum of differences between the calculated image intensities and predetermined values, wherein the sum is evaluated over said plurality of lithography target points; and

adjusting the photomask data in a way that decreases the said figure-of-demerit.

16. The method as defined by claim 15, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography exposure dose.

17. The method as defined by claim 15, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography defocus parameter.

18. The method as defined by claim 15, wherein said step of calculating a figure-of-demerit further comprises calculating an image slope.

19. A photomask made using the method defined by claim 15.

20. A method of synthesizing a photomask data set from a given target layout, comprising the steps of:

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons by a computer, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises includes calculating a convolution of a point-spread-function with a photoresist pattern density; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

21. A photomask made using the method defined by claim 20.

22. A computer readable medium comprising computer executable instructions to cause a computer to:

a) provide a set of target polygons for said target layout;

b) fit a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) move the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises calculating how much of a region above a wafer is visible from a point on the sidewall of an etched feature in the wafer; and

d) synthesize a photomask data set based on a model of a lithography process and the set of lithography-target points.

23. The computer readable medium as defined by claim 22, wherein said target layout is applicable to a region of a chip, and further compromising repeating the computer executable instructions for at least one further region of the chip.

24. The computer readable medium as defined by claim 22, wherein said steps (b) and (c) are performed for other polygons of said set of polygons.

25. The computer readable medium as defined by claim 24, wherein said model of an etch process of step (c) has adjustable parameters, the computer executable instructions adapted to further cause the computer to:

print a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measure critical dimensions of the photoresist pattern;

etch a pattern into a layer on a wafer;

measure critical dimensions of the etched pattern; and

select the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

26. The computer readable medium as defined by claim 22, wherein said smooth curve of step (b) substantially matches the target polygon, except at its vertices.

27. The computer readable medium as defined by claim 26, wherein said smooth curve of step (b) comprises an etch target curve on which said etch target points lie.

28. The computer readable medium as defined by claim 22, wherein said model of an etch process of step (c) comprises calculating a convolution of a point-spread-function with a photoresist pattern density.

29. The computer readable medium as defined by claim 22, wherein said model of an etch process of step (c) has adjustable parameters, the computer executable instructions adapted to further cause the computer to:

print a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measure critical dimensions of the photoresist pattern;

etch a pattern into a layer on a wafer;

measure critical dimensions of the etched pattern; and

select the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

30. The computer readable medium as defined by claim 29, wherein said selecting step further comprises substantially minimizing a weighted sum of squares of differences between predictions of the model of the etch process and measured critical dimensions.

31. The computer readable medium as defined by claim 22, wherein said step (d) of synthesizing a photomask data set further comprises calculating edge placement errors at a plurality of lithography target points.

32. The computer readable medium as defined by claim 31, wherein said step of synthesizing a photomask further comprises calculating how much a resist edge is displaced in response to a change in an exposure dose or defocus.

33. The computer readable medium as defined by claim 22, wherein said step (c) utilizes an algorithm selected from the group consisting of a Overmars-Welzl Algorithm, a Ghosh-Mount Algorithm, and a Lee Algorithm, for constructing a visibility graph in a plane.

34. A computer readable medium comprising computer executable instructions to cause a computer to:

a) provide a set of target polygons for said target layout;

b) fit a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) move the etch target points according to a model of an etch process to produce a set of lithography-target points; and

d) synthesize a photomask data set based on a model of a lithography process and the set of lithography-target points and wherein synthesizing a photomask data set further comprises;

calculating an image intensity at a plurality of lithography target points according to the model of the lithography process;

calculating a figure-of-demerit comprising a sum of differences between the calculated image intensities and predetermined values, wherein the sum is evaluated over said plurality of lithography target points; and

adjusting the photomask data in a way that decreases the said figure-of-demerit.

35. The computer readable medium as defined by claim 34, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography exposure dose.

36. The computer readable medium as defined by claim 34, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography defocus parameter.

37. The computer readable medium as defined by claim 34, wherein said step of calculating a figure-of-demerit further comprises calculating an image slope.

38. A computer readable medium comprising computer executable instructions to cause a computer to:

a) provide a set of target polygons for said target layout;

b) fit a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) move the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises includes calculating a convolution of a point-spread-function with a photoresist pattern density; and

d) synthesize a photomask data set based on a model of a lithography process and the set of lithography-target points.

39. A computer-aided design apparatus configured to synthesize a photomask data set from a given target layout, comprising

a processor;

a memory connected to the processor; and

a computer readable medium having instructions embedded therein, the instructions configured to cause the processor to perform the operations of;

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises calculating how much of a region above a wafer is visible from a point on the sidewall of an etched feature in the wafer; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

40. The computer-aided design apparatus of claim 39, wherein said target layout is applicable to a region of a chip, and further compromising repeating the operations for at least one further region of the chip.

41. The computer-aided design apparatus of claim 39, wherein said steps (b) and (c) are performed for other polygons of said set of polygons.

42. The computer-aided design apparatus of claim 41, wherein said model of an etch process of step (c) has adjustable parameters, the instructions configured to further cause the processor to perform the operations of:

printing a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measuring critical dimensions of the photoresist pattern;

etching a pattern into a layer on a wafer;

measuring critical dimensions of the etched pattern; and

selecting the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

43. The computer-aided design apparatus of claim 39, wherein said smooth curve of step (b) substantially matches the target polygon, except at its vertices.

44. The computer-aided design apparatus of claim 43, wherein said smooth curve of step (b) comprises an etch target curve on which said etch target points lie.

45. The computer-aided design apparatus of claim 39, wherein said model of an etch process of step (c) comprises calculating a convolution of a point-spread-function with a photoresist pattern density.

46. The computer-aided design apparatus of claim 39, wherein said model of an etch process of step (c) has adjustable parameters, the instructions configured to further cause the processor to perform the operations of:

printing a test pattern in photoresist on a wafer thereby forming a photoresist pattern;

measuring critical dimensions of the photoresist pattern;

etching a pattern into a layer on a wafer;

measuring critical dimensions of the etched pattern; and

selecting the adjustable parameters of the model of the etch process according to the measured critical dimensions of the photoresist pattern and the measured critical dimensions of the etched pattern.

47. The computer-aided design apparatus of claim 46, wherein said selecting step further comprises substantially minimizing a weighted sum of squares of differences between predictions of the model of the etch process and measured critical dimensions.

48. The computer-aided design apparatus of claim 39, wherein said step (d) of synthesizing a photomask data set further comprises calculating edge placement errors at a plurality of lithography target points.

49. The computer-aided design apparatus of claim 48, wherein said step of synthesizing a photomask further comprises calculating how much a resist edge is displaced in response to a change in an exposure dose or defocus.

50. The computer-aided design apparatus of claim 39, wherein said step (c) utilizes an algorithm selected from the group consisting of a Overmars-Welzl Algorithm, a Ghosh-Mount Algorithm, and a Lee Algorithm, for constructing a visibility graph in a plane.

51. A computer-aided design apparatus configured to synthesize a photomask data set from a given target layout, comprising

a processor;

a memory connected to the processor; and

a computer readable medium having instructions embedded therein, the instructions configured to cause the processor to perform the operations of;

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points and wherein synthesizing a photomask data set further comprises;

calculating an image intensity at a plurality of lithography target points according to the model of the lithography process;

calculating a figure-of-demerit comprising a sum of differences between the calculated image intensities and predetermined values, wherein the sum is evaluated over said plurality of lithography target points; and

adjusting the photomask data in a way that decreases the said figure-of-demerit.

52. The computer-aided design apparatus of claim 51, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography exposure dose.

53. The computer-aided design apparatus of claim 51, wherein said step of calculating a figure-of-demerit further comprises calculating how much a resist edge moves in response to a change in a lithography defocus parameter.

54. The computer-aided design apparatus of claim 51, wherein said step of calculating a figure-of-demerit further comprises calculating an image slope.

55. A computer-aided design apparatus configured to synthesize a photomask data set from a given target layout, comprising

a processor;

a memory connected to the processor; and

a computer readable medium having instructions embedded therein, the instructions configured to cause the processor to perform the operations of;

a) providing a set of target polygons for said target layout;

b) fitting a smooth curve to a target polygon of said set of target polygons, the curve having a set of etch-target points;

c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points, wherein said model of an etch process comprises includes calculating a convolution of a point-spread-function with a photoresist pattern density; and

d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.