Methods for producing a light emitting semiconductor body with a luminescence converter element

• US 7,601,550 B2
• Filed: 03/02/2001
• Issued: 10/13/2009
• Est. Priority Date: 03/03/2000
• Status: Expired due to Fees

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Debray, Alexandra, Bogner, Georg, Waitl, Gunter
• Primary Examiner(s): Blum; David S
• Application Number:
  US10/204,576
• Publication Number:
  US 20050244993A1
• Time in Patent Office: 3,147 Days
• Field of Search: 257/E33.06, 257/E33.061, 438/26, 438/27, 438/29
• US Class Current: 438/27
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder

Abstract

The invention describes two methods of fabricating semiconductor components in which a luminescence conversion element is applied directly to the semiconductor body (1). In the first method, a suspension (4) containing a bonding agent and at least one luminescent material (5) is applied to the semiconductor body (1) in layers. In the next step the solvent escapes, leaving only the luminescent material (5) with the bonding agent on the semiconductor body.

In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly.

Claims

1. A method for fabricating a light-radiating semiconductor component that includes an electrically contacted light emitting semiconductor body, mounted on a substrate element, and a luminescence conversion element that comprises at least one luminescent material and is deposited on said semiconductor body, characterized by the steps of

fabricating said semiconductor body, mounting on said substrate element and electrical contacting,

applying a layer of bonding agent to at least one surface of said semiconductor body, wherein a maximum thickness of the layer of bonding agent is smaller than a thickness of the semiconductor body, and

applying at least one luminescent material to the layer of bonding agent.

2. The method of claim 1, characterized in that epoxy resin, acrylic resin or silicone is used as the bonding agent.

3. The method of claim 1, characterized in that said at least one luminescent material is scattered, blown or dusted on.

4. The method of claim 1, characterized in that said luminescent material contains YAG:

Ce, TbYAG;

Ce, GdYAG;

Ce, GdTbYAG;

Ce or mixtures based thereon, Al optionally being replaced at least partially by Ga or In.

5. The method of claim 2, characterized in that said at least one luminescent material is scattered, blown or dusted on.

6. The method of claim 1, characterized in that inorganic phosphors, Ce- or Tb-activated garnets, alkaline earth sulfides or organic dyes are used as said luminescent material.

7. The method of claim 2, characterized in that inorganic phosphors, Ce- or Tb-activated garnets, alkaline earth sulfides or organic dyes are used as said luminescent material.

8. The method of claim 3, characterized in that inorganic phosphors, Ce- or Tb-activated garnets, alkaline earth sulfides or organic dyes are used as said luminescent material.

9. The method of claim 1, characterized in that the average grain size of said at least one luminescent material is 10 μ

m.

10. The method of claim 1, characterized by casting of the component in epoxy resin or acrylic resin.

11. The method of claim 1, characterized in that the central wavelength of the radiation emitted by said semiconductor body during operation is less than 460 nm.

12. The method of claim 1, characterized in that the color of the radiation emitted by said semiconductor body during operation and the color of the light emitted by said at least one luminescent material are mutually complementary, thereby producing the effect of white light.

13. The use of a plurality of components fabricated according to claim 1, in an LED lighting unit.

14. The use of a plurality of components fabricated according to claim 1, in an LED lighting unit, in which the components fabricated according claim 1 are in a matrix type of arrangement.

15. The use of a component fabricated according to claim 1, as a light source in an imaging optics.

21. The method of claim 1, wherein the layer of bonding agent is applied to a plurality of surfaces of the semiconductor body, and the at least one luminescent material is applied to the plurality of surfaces.

16. A method for fabricating a light-radiating semiconductor component comprising:

providing a light emitting semiconductor body;

applying a layer of bonding agent to at least one surface of the semiconductor body, wherein a maximum thickness of the layer of bonding agent is smaller than a thickness of the semiconductor body; and

applying at least one luminescent material to the layer of bonding agent.

17. The method of claim 16 wherein the application of the at least one luminescent material to the at least one surface of the semiconductor body comprises:

applying the at least one luminescent material to the semiconductor body such that the volume from which light from the luminescent material radiates matches the volume from which light from the semiconductor body radiates.

18. The method of claim 16 wherein the application of the at least one luminescent material to the at least one surface of the semiconductor body comprises:

applying the at least one luminescent material to the surface of the semiconductor body such that the at least one luminescent material is not dispersed in the layer of bonding agent.

22. The method of claim 16, wherein the layer of bonding agent is applied to a plurality of surfaces of the semiconductor body, and the at least one luminescent material is applied to the plurality of surfaces.

19. A method for fabricating a light-radiating semiconductor component that includes an electrically contacted semiconductor body mounted on a substrate element, and a luminescence conversion element that comprises at least one luminescent material deposited on said semiconductor body, the method comprising:

fabricating the semiconductor body, mounting the semiconductor body to a substrate element, and electrically contacting the semiconductor body;

spraying a layer of bonding agent onto at least one surface of the semiconductor body; and

applying the at least one luminescent material to the at least one surface of the semiconductor body.

23. The method of claim 19, wherein the layer of bonding agent is sprayed onto a plurality of surfaces of the semiconductor body, and the at least one luminescent material is applied to the plurality of surfaces.

20. A method for fabricating a light-radiating semiconductor component, the method comprising:

providing a light emitting semiconductor body;

spraying a layer of bonding agent onto at least one surface of the semiconductor body; and

applying at least one luminescent material to the at least one surface of the semiconductor body.

24. The method of claim 20, wherein the layer of bonding agent is sprayed onto a plurality of surfaces of the semiconductor body, and the at least one luminescent material is applied to the plurality of surfaces.

25. A method for fabricating a light-radiating semiconductor component, the method comprising:

providing a light emitting semiconductor body;

applying a layer of bonding agent to a plurality of surfaces of the semiconductor body; and

applying at least one luminescent material to the layer of bonding agent.