Atomic layer deposited tantalum containing adhesion layer

• US 7,601,637 B2
• Filed: 12/24/2008
• Issued: 10/13/2009
• Est. Priority Date: 06/30/2004
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Peterson, Brennan L., Johnston, Steven W., Spurgin, Kerry
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US12/317,537
• Publication Number:
  US 20090155998A1
• Time in Patent Office: 293 Days
• Field of Search: 438/628, 438/644, 438/654, 438/656, 438/648, 257/E21.585
• US Class Current: 438/654
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric

Abstract

Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

Claims

1. A method of fabricating a contact, comprising:

providing at least one dielectric layer;

forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;

atomic layer depositing a tantalum containing adhesion layer on said at least one opening side, said tantalum containing adhesion layer comprising about 10% oxygen and about 25% carbon; and

depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.

2. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of ammonia.

3. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of ammonia.

4. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of hydrogen.

5. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of hydrogen.

6. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of silane.

7. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of silane.

8. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer comprises depositing a layer of TaC_xN_ySi_zO_w, wherein x, y, z, and w are less than 1.

9. The method of claim 1, wherein atomic layer depositing said tantalum containing adhesion layer on said at least one opening side comprises atomic layer depositing said tantalum containing adhesion layer on said at least one opening side to a thickness between about 5 and 25 angstroms.

10. The method of claim 1, wherein depositing said at least one conductive material to fill said opening and abut said tantalum containing layer comprises depositing copper to fill said opening and abut said tantalum containing adhesion layer.

11. A method comprising:

forming at least one dielectric layer;

forming at least one opening in said at least one dielectric layer;

extending a conductive material through said at least one opening in said at least one dielectric layer, said conductive material comprising copper; and

atomic layer depositing a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen and 25% carbon, said tantalum containing adhesion layer comprising a thickness between about 5 and 25 angstroms.

12. The method of claim 11, wherein said tantalum containing adhesion layer comprises TaC_xN_ySi_zO_w, wherein x, y, z, and w are less than 1.

13. The method of claim 11, wherein said atomic layer depositing comprises a pressure of about 0.1 to 50 Torr.

14. The method of claim 11, wherein said atomic layer depositing comprises a temperature of about 200 to 350 degrees Centigrade.

15. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of ammonia.

16. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of ammonia.

17. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of hydrogen.

18. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of hydrogen.

19. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of pentakis(dimethylamido)tantalum and a reducing agent of silane.

20. The method of claim 11 wherein atomic layer depositing said tantalum containing adhesion layer comprises providing a metal precursor of tert-butylimidotris(diethylamido)tantalum and a reducing agent of silane.