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Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator

  • US 7,601,984 B2
  • Filed: 11/09/2005
  • Issued: 10/13/2009
  • Est. Priority Date: 11/10/2004
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising an active layer of an amorphous oxide containing a microcrystal, wherein a grain boundary interface of the microcrystal is surrounded by the amorphous oxide and a gate electrode formed so as to face the active layer through a gate insulator.

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