Liquid crystal display device and method for manufacturing the same

• US 7,602,452 B2
• Filed: 09/12/2006
• Issued: 10/13/2009
• Est. Priority Date: 09/13/2005
• Status: Active Grant

• Current Assignee: Japan Display West Incorporated (Japan Display Incorporated)
• Original Assignee: Epson Imaging Devices Corporation (Seiko Group)
• Inventors: Sato, Takashi, Kato, Takayuki, Morita, Satoshi, Sugiyama, Hiroki, Nomura, Shinichiro, Atarashiya, Takao
• Primary Examiner(s): KIM, ELLEN E
• Application Number:
  US11/519,032
• Publication Number:
  US 20070058097A1
• Time in Patent Office: 1,127 Days
• Field of Search: 349/33, 349 36- 38, 438/30, 257/E21.535
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes

Abstract

A liquid crystal display device 10 includes: a transparent substrate 11; a plurality of signal lines 17 and scan lines 16 arranged on the transparent substrate 11 in a matrix; a plurality of auxiliary capacitor lines 18 provided between the scan lines 16 so as to be in parallel with the scan lines 16; thin film transistors (TFTs) each provided in a vicinity of an intersection of the signal lines 17 and scan lines 16; and pixel electrodes 20 arranged in respective positions defined by the signal lines 17 and the scan lines 16 and each electrically connected to a drain electrode D of the thin film transistor (TFT); in which the thin film transistor (TFT)'"'"'s gate electrode G and the scan line 16 are covered by a gate insulating film formed by an insulating film (a first layer) 25 and an insulating layer (a second layer) 26, and the drain electrode D of the thin film transistor (TFT) extends to overlie an auxiliary capacitor electrode 18a, with the insulating layer (the second layer) 26 interposed between the drain electrode D and the auxiliary capacitor electrode 18a. As a result, it will be possible to provide a liquid crystal display device and a method for manufacturing the same are provided, in which the capacitance of an auxiliary capacitor electrode is increased without reducing the aperture ratio of each pixel and which is suitable to realize a relatively small pixel area and high definition.

Claims

1. A liquid crystal display device, comprising:

a transparent substrate;

a plurality of signal lines and scan lines arranged on said transparent substrate in a matrix;

a plurality of auxiliary capacitor lines provided between said scan lines so as to be in parallel with said scan lines;

thin film transistors each provided in a vicinity of an intersection of said signal lines and scan lines; and

pixel electrodes arranged in respective positions defined by said signal lines and said scan lines and each electrically connected to a drain electrode of said thin film transistor,

said thin film transistor'"'"'s gate electrode and said scan line being covered by a gate insulating film, and

said thin film transistor'"'"'s drain electrode extending to overlie said auxiliary capacitor line, with an insulating layer having a smaller thickness than that of said gate insulating film being interposed between the drain electrode and said auxiliary capacitor line, and therby forming an auxiliary capacitor,

wherein the edges of said insulating layer, which is positioned above said auxiliary capacitor line, are positioned inside of the edges of said auxiliary capacitor line.

2. The liquid crystal display device according to claim 1, wherein,

said gate insulating film is constituted by a plurality of layers, and

said insulating layer is constituted by at least one of said plurality of layers.

3. The liquid crystal display device according to claim 2, wherein said insulating layer is constituted by the uppermost one of said plurality of layers that constitute said gate insulating film.

4. The liquid crystal display device according to claim 2, wherein said insulating layer is constituted by one of said plurality of layers that constitute said gate insulating film, said one of said plurality of layers being the one closest to said transparent substrate.

5. The liquid crystal display device according to claim 2, wherein said insulating layer is constituted by one of said plurality of layers that constitute said gate insulating film, said one of said plurality of layers being the thinnest of said plurality of layers.

6. The liquid crystal display device according to claim 1, wherein the thickness of said gate insulating film is in a range of 2500 to 5500 Å

, and the thickness of said insulating layer is in a range of 500 to 1500 Å

.

7. The liquid crystal display device according to claim 1, further comprising:

an interlayer insulating film formed between said pixel electrode and said drain electrode; and

a contact hole formed at a portion of said interlayer insulating film, said portion being positioned over said auxiliary capacitor line, wherein

said pixel electrode and said drain electrode are electrically connected to each other via said contact hole.

8. The liquid crystal display device according to claim 7, further comprising a reflective film formed on the front or back surface of said pixel electrode so as to cover either said thin film transistor and said auxiliary capacitor line or the entire area of the position corresponding to said pixel electrode.

9. A method for manufacturing a liquid crystal display device, the method comprising:

(a) arranging, on a transparent substrate, a plurality of scan lines connecting with gate electrodes and a plurality of auxiliary capacitor lines so as to be in parallel with each other;

(b) forming a gate insulating film so as to cover the entire area of said transparent substrate;

(c) making thinner a portion of said gate insulating film to form an insulating layer with a smaller thickness than that of the region surrounding said auxiliary capacitor line, said portion being positioned above said auxiliary capacitor line; and

(d) forming a drain electrode of a thin film transistor above said gate insulating film and extending said drain electrode of said thin film transistor so as to cover said insulating layer positioned above said auxiliary capacitor line, thereby forming an auxiliary capacitor,

wherein the edges of said insulating layer, which is positioned above said auxiliary capacitor line, are positioned inside of the edges of said auxiliary capacitor line.

10. The method for manufacturing a liquid crystal device according to claim 9, wherein said step (c) includes:

forming a semiconductor layer on said gate insulating film;

applying photoresist onto a surface of said semiconductor layer;

by use of a halftone mask, removing an auxiliary capacitor formation portion of said photoresist and allowing thick photoresist to remain at a position corresponding to said gate electrode and thin photoresist to remain at the other position, said auxiliary capacitor formation portion being positioned above said auxiliary capacitor line;

after etching away said auxiliary capacitor formation portion of said semiconductor layer, which is exposed, further removing a portion of said gate insulating film to form an insulating layer with a smaller thickness than that of the portion of said gate insulating film that surrounds said insulating layer, said portion of said gate insulating film corresponding to said auxiliary capacitor formation portion;

removing said thin photoresist to allow said photoresist to remain only at a position corresponding to said gate electrode;

removing an exposed portion of said semiconductor layer by etching; and

removing the remaining portion of said photoresist.

11. The method for manufacturing a liquid crystal device according to claim 9, wherein,

said step (b) includes forming a plurality of layers to form said gate insulating film, and

said step (c) includes removing at least one of said plurality of layers.

12. The method for manufacturing a liquid crystal device according to claim 11, wherein said removing of at least one of said plurality of layers consists of removing that one of said plurality of layers that was formed first.

13. The method for manufacturing a liquid crystal device according to claim 11, wherein said removing of at least one of said plurality of layers consists of removing that one of said plurality of layers that was formed last.

14. The method for manufacturing a liquid crystal device according to claim 11, wherein said plurality of layers that constitute said gate insulating film are all made of an identical material and have been formed by setting a different substrate temperature for each layer.

15. The method for manufacturing a liquid crystal device according to claim 14, wherein,

a highest substrate temperature is set when forming a first gate insulating film, and

progressively lower substrate temperatures are set for the subsequent gate insulating film in order of formation.

16. The method for manufacturing a liquid crystal device according to claim 11, wherein said plurality of layers that constitute said gate insulating film are all made of an identical material and have been formed by using, for each layer, a different ingredient for a surrounding atmospheric gas.

17. The method for manufacturing a liquid crystal device according to claim 9, further comprising:

forming an interlayer insulating film so as to cover said drain electrode;

forming a contact hole at a portion of said interlayer insulating film, said portion corresponding to the position where said drain electrode overlies said auxiliary capacitor line; and

forming, on said interlayer insulating film, a pixel electrode so as to be electrically connected to said drain electrode via said contact hole.

18. The method for manufacturing a liquid crystal device according to claim 17, further comprising forming, prior to or after forming of said pixel electrode, a reflector plate either at positions corresponding to said thin film transistor and said auxiliary capacitor line or in the entire region corresponding to said pixel electrode.