Method and apparatus for performing limited area spectral analysis
First Claim
Patent Images
1. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
- acquiring data at a first location on a substrate disposed in a semiconductor substrate processing chamber using an in-situ measuring tool, the measuring tool moveable along two axes;
moving the measuring tool to at least a second location over the substrate;
acquiring data at least a second location on the substrate; and
analyzing the acquired data to identify defects in the monitored substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
-
Citations
20 Claims
-
1. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
-
acquiring data at a first location on a substrate disposed in a semiconductor substrate processing chamber using an in-situ measuring tool, the measuring tool moveable along two axes; moving the measuring tool to at least a second location over the substrate; acquiring data at least a second location on the substrate; and analyzing the acquired data to identify defects in the monitored substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
-
providing an etch chamber having an in-situ measuring tool, the measuring tool moveable along two axes; acquiring data at a first location on a substrate disposed in the etch chamber using the measuring tool; moving the measuring tool to at least a second location over the substrate; acquiring data at least a second location on the substrate; and analyzing the acquired data to identify defects in the monitored substrate. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
-
acquiring data at a first location on a substrate disposed in a semiconductor substrate processing chamber using an in-situ measuring tool, the measuring tool moveable along two axes; moving the measuring tool to at least a second location over the substrate; acquiring data at the second location on the substrate; detecting a first reflectance signal at a target location on the substrate; and monitoring a second location on the substrate that correlates to the target location to detect a second reflectance signal that is stronger than the first reflectance signal.
-
Specification