Method for manufacturing a magnetoresistive multilayer film

• US 7,603,763 B2
• Filed: 10/18/2004
• Issued: 10/20/2009
• Est. Priority Date: 10/16/2003
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: Tsunekawa, Koji, Djayaprawira, David Djulianto, Nagai, Motonobu
• Primary Examiner(s): Banks; Derris H
• Assistant Examiner(s): NGUYEN, TAI V
• Application Number:
  US10/965,796
• Publication Number:
  US 20050083612A1
• Time in Patent Office: 1,828 Days
• Field of Search: 296/030.7, 296/030.8, 296/031.3, 296/031.4, 296/030.3, 360/324.1, 360/324, 360/314, 360/317, 360/313, 360/324.11, 360/324.12, 204/192.1, 204/192.11, 204/192.2, 428/832, 428/692, 428/694, 428/64.1, 428/64.4, 428/64.5
• US Class Current: 29/603.13
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01F 10/30 characterised by the composition of the intermediate layers , e.g. seed, buffer, template, diffusion preventing, cap layers H01F10/06 and H01F10/32 take precedence
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10T 29/49025 Making disc drive
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49034 Treating to affect magnetic properties
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for the antiferromagnetic layer is deposited by a sputtering process with a gas mixture of argon and another gas of larger atomic number than argon.

Claims

1. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

wherein

the antiferromagnetic layer is deposited by a sputtering process as a gas mixture of argon and another gas of larger atomic number than argon is used;

the gas of larger atomic number than argon is krypton or xenon;

a flow rate of the gas of larger atomic number is 10 percent or more relative to that of argon;

the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free; and

the magnetoresistive multilayer film is a tunnel type.

2. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 1, wherein

the antiferromagnetic layer is a PtMn or,IrMn film,

the pinned-magnetization layer is a couple of CoFe or CoFeB films,

the nonmagnetic spacer layer is an alumina or magnesium oxide film, and

the free-magnetization layer is a CoFeB film or a lamination of CoFe and NiFe films.

3. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 1, wherein

a target is used in the sputtering process, and

the target is made of different kinds of atoms having a large difference in atomic number such as Pt and Mn, or Jr and Mn.

4. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetie layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

wherein

the antiferromagnetie layer is deposited by a sputtering process as a gas mixture of argon and another gas of larger atomic number than argon is used;

the gas of larger atomic number than argon is krypton or xenon;

a flow rate of the gas of larger atomic number is 50 percent or more relative to that of argon;

the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free; and

the magnetoresistive multilayer film is a tunnel type.

5. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 4, wherein

the antiferromagnetic layer is a PtMn or IrMn film,

the pinned-magnetization layer is a couple of CoFe or CoFeB films,

the nonmagnetic spacer layer is an alumina or magnesium oxide film, and

the free-magnetization layer is a CoFeB film or a lamination of CoFe and NiFe films.

6. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 4, wherein

a target is used in the sputtering process, and

the target is made of different kinds of atoms having a large difference in atomic number such as Pt and Mn, or Jr and Mn.

7. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

wherein

the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 100 percent;

the gas of larger atomic number than argon is krypton or xenon;

the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free; and

the magnetoresistive multilayer film is a tunnel type.

8. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 7, wherein

the antiferromagnetic layer is a PtMn or IrMn film,

the pinned-magnetization layer is a couple of CoFe or CoFeB films,

the nonmagnetic spacer layer is an alumina or magnesium oxide film, and

the free-magnetization layer is a CoFeB film or a lamination of CoFe and NiFe films.

9. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 7, wherein

a target is used in the sputtering process, and

the target is made of different kinds of atoms having a large difference in atomic number such as Pt and Mn, or Jr and Mn.