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Method of manufacturing semiconductor device

  • US 7,605,029 B2
  • Filed: 04/25/2006
  • Issued: 10/20/2009
  • Est. Priority Date: 01/18/2001
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming an insulating layer over a substrate;

    forming a semiconductor film comprising amorphous silicon over the insulating layer;

    providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;

    crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;

    forming a film over the crystallized semiconductor film;

    forming a resist mask on the film;

    opening a selected region of the film by removing the film with the resist mask;

    introducing a rare gas element into the selected region while the resist mask remains; and

    heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light so that the metal element contained in the crystallized semiconductor film is horizontally gettered to said selected region,wherein the rare gas element is added to the insulating layer.

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