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Method of forming metal oxide using an atomic layer deposition process

  • US 7,605,094 B2
  • Filed: 06/28/2007
  • Issued: 10/20/2009
  • Est. Priority Date: 06/09/2004
  • Status: Active Grant
First Claim
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1. A method of forming a metal oxide comprising:

  • introducing a first reactant including a metal, at least one amino group and at least one multidentate ligand including at least two electron pair donors into a chamber to chemisorb the first reactant onto a substrate, and to bond the amino group and the multidentate ligand to the metal;

    removing a non-chemisorbed first reactant from the chamber; and

    introducing a second reactant into the chamber to form the metal oxide, the second reactant including an oxygen-containing compound that reacts with the metal to form the metal oxide, and to separate the amino group and the multidentate ligand from the metal,wherein the first reactant is represented by the following chemical formula, embedded image wherein, M represents the metal and R1 to R8 independently represent a hydrogen or an alkyl group including 1 to 5 carbon atoms.

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