Method of forming metal oxide using an atomic layer deposition process
First Claim
1. A method of forming a metal oxide comprising:
- introducing a first reactant including a metal, at least one amino group and at least one multidentate ligand including at least two electron pair donors into a chamber to chemisorb the first reactant onto a substrate, and to bond the amino group and the multidentate ligand to the metal;
removing a non-chemisorbed first reactant from the chamber; and
introducing a second reactant into the chamber to form the metal oxide, the second reactant including an oxygen-containing compound that reacts with the metal to form the metal oxide, and to separate the amino group and the multidentate ligand from the metal,wherein the first reactant is represented by the following chemical formula, wherein, M represents the metal and R1 to R8 independently represent a hydrogen or an alkyl group including 1 to 5 carbon atoms.
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Abstract
In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,
M[L1]x[L2]y
where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
8 Citations
12 Claims
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1. A method of forming a metal oxide comprising:
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introducing a first reactant including a metal, at least one amino group and at least one multidentate ligand including at least two electron pair donors into a chamber to chemisorb the first reactant onto a substrate, and to bond the amino group and the multidentate ligand to the metal; removing a non-chemisorbed first reactant from the chamber; and introducing a second reactant into the chamber to form the metal oxide, the second reactant including an oxygen-containing compound that reacts with the metal to form the metal oxide, and to separate the amino group and the multidentate ligand from the metal, wherein the first reactant is represented by the following chemical formula, wherein, M represents the metal and R1 to R8 independently represent a hydrogen or an alkyl group including 1 to 5 carbon atoms. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a metal oxide comprising:
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introducing a first reactant including a metal, at least one alkoxide group and at least one multidentate ligand including at least two electron pair donors into a chamber to chemisorb the first reactant onto a substrate, and to bond the alkoxide group and the multidentate ligand to the metal; removing a non-chemisorbed first reactant from the chamber; and introducing a second reactant into the chamber to form the metal oxide, the second reactant including an oxygen-containing compound that reacts with the metal to form the metal oxide, and to separate the alkoxide group and the multidentate ligand from the metal, wherein the first reactant is represented by the following chemical formula, wherein, M represents the metal, and R1 to R6 independently represent a hydrogen or an alkyl group including 1 to 5 carbon atoms. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification