Siloxane-polymer dielectric compositions and related organic field-effect transistors

• US 7,605,394 B2
• Filed: 12/22/2005
• Issued: 10/20/2009
• Est. Priority Date: 12/23/2004
• Status: Expired due to Fees

• Current Assignee: Northwestern University
• Original Assignee: Northwestern University
• Inventors: Marks, Tobin J., Yan, He, Facchetti, Antonio, Yoon, Myung-Han
• Primary Examiner(s): Gulakowski; Randy
• Assistant Examiner(s): Ojurongbe; Olatunde S
• Application Number:
  US11/315,076
• Publication Number:
  US 20060202195A1
• Time in Patent Office: 1,398 Days
• Field of Search: 525/56, 427/512, 427/515, 427/568, 428/447, 106/287.1, 106/287.11, 106/287.13, 106/287.14, 257/40, 438/99
• US Class Current: 257/40
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/615 Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
• CPC Class Codes: H10K 85/655 comprising only sulfur as heteroatom

Abstract

Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.

Claims

1. A dielectric composition comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol), a copolymer of a poly(vinylalcohol), and combinations thereof;

and a bis(silyl)alkyl component of the formula (X)_3-m(Y)_mSi(Z)Si(Y′

)_m′

(X′

)_3-m′

, wherein Z is a moiety selected from (CH₂)_n, a divalent branched alkyl group, and a divalent substituted alkyl group;

n ranges from 1 to 20;

X and X′

are independently selected from halide, amino, alkoxy and carboxylate groups, and combinations thereof;

Y and Y′

are independently selected from H and alkyl; and

m and m′

independently range from 0 to 2.

2. The composition of claim 1 where n ranges from 3 to 14.

3. The composition of claim 1 wherein X and X′

are independently selected from chloride, acetoxy and combinations thereof.

4. The composition of claim 1 comprising metal oxide particles, said particles comprising a metal component selected from a Group III metal, Group IV metal and a transition metal, and combinations thereof.

5. The composition of claim 1, wherein Z is a moiety selected from (CH₂)₆ and (CH₂)₁₂.

6. The composition of claim 1, wherein Z is (CF₂)_n, wherein n is as defined in claim 1.

7. A method of preparing the dielectric composition of claim 1, the method comprising contacting the polymeric component and the bis(silyl)alkyl component to provide the condensation product.

8. The method of claim 7, comprising mixing the polymeric component and the bis(silyl)alkyl component with metal oxide particles, wherein the metal oxide particles comprise a metal component selected from a Group III metal, a Group IV metal, a transition metal, and combinations thereof.

9. A method of using the dielectric composition of claim 1, the method comprising depositing the dielectric composition to provide a dielectric component.

10. The method of claim 9, wherein depositing the dielectric composition comprises spin-coating, solution-casting, or printing.

13. A composite comprising a dielectric component comprising the composition of claim 1 and a semiconductor component comprising a compound selected from an n-type semiconductor material and a p-type semiconductor material.

14. The composite of claim 13, wherein the dielectric component has a thickness from about 10 nm to about 1 micron.

15. The composite of claim 13, wherein the dielectric component has a thickness dimension less than about 20 nm.

16. The composite of claim 13, wherein the semiconductor component comprises a compound selected from a fused heterocycle, a fused aromatic compound, and combinations thereof.

17. The composite of claim 13, wherein the semiconductor component comprises a compound selected from a polythiophene, a pentacene, and a phthalocyanine.

18. The composite of claim 13, wherein the composite is on a substrate.

19. The composite of claim 18, wherein the substrate is flexible.

20. The composite of claim 18, wherein the substrate comprises a gate component of a transistor device, the transistor device comprising source and drain electrodes.

21. The composite of claim 20, wherein the transistor device is a field-effect transistor.

22. The composite of claim 20, wherein the transistor device is an organic thin-film transistor.

23. The composite of claim 20, wherein the transistor device is a complementary logic device.

24. The composite of claim 23, wherein the complementary logic device is an inverter.

11. A dielectric composition comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol) and a copolymer of a poly(vinylalcohol) and combinations thereof and a bis(silylated) component of the formula (X)_3-m(Y)_mSi(Z)Si(Y′

)_m′

(X′

)_3-m′

, wherein Z is a moiety selected from O, (CH₂)_n, a divalent branched alkyl group, and a divalent substituted alkyl group;

n ranges from 1 to 20;

X and X′

are independently selected from halide and amino groups, and combinations thereof;

Y and Y′

are independently selected from H and alkyl; and

m and m′

independently range from 0 to 2.

12. A dielectric film comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol), a copolyrner of a poly(vinylalcohol), and combinations thereof;

and a bis(silylated) component of the formula (X)_3-m(Y)_mSi(Z)Si(Y′

)_m′

(X′

)_3-m′

, wherein Z is a moiety selected from O, (CH₂)_n, a divalent branched alkyl group, and a divalent substituted alkyl group;

n ranges from 1 to 20;

X and X′

are independently selected from halide, amino, alkoxy and carboxylate groups, and combinations thereof Y and Y′

are independently selected from H and alkyl; and

m and m′

independently range from 0 to 2;

wherein the dielectric film has a thickness between about 10 nm and about 30 nm, and exhibits a capacitance of at least about 150 nF cm<sup>−

2</sup>.