Field plate trench transistor
First Claim
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1. A field plate trench transistor comprising:
- a semiconductor body containing a plurality of trenches which are isolated from one another by mesa regions, the trenches containing gate electrodes operable to control a vertical flow of current through the semiconductor body,wherein a first plurality of the gate electrodes is configured such that when a gate potential and a source potential are applied to the field plate trench transistor, the first plurality of the gate electrodes is at the source potential which differs from the gate potential, and the remaining gate electrodes which form a second plurality of the gate electrodes are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the second plurality of the gate electrodes are at the gate potential, andbelow the second plurality of the gate electrodes within the trenches there are field electrodes which are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the field electrodes are at the source potential.
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Abstract
A field plate trench transistor has a semiconductor body which contains a plurality of trenches which are isolated from one another by mesa regions. The trenches contain gate electrodes for controlling a vertical flow of current through the semiconductor body. At least one portion of the gate electrodes are at source potential.
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Citations
15 Claims
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1. A field plate trench transistor comprising:
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a semiconductor body containing a plurality of trenches which are isolated from one another by mesa regions, the trenches containing gate electrodes operable to control a vertical flow of current through the semiconductor body, wherein a first plurality of the gate electrodes is configured such that when a gate potential and a source potential are applied to the field plate trench transistor, the first plurality of the gate electrodes is at the source potential which differs from the gate potential, and the remaining gate electrodes which form a second plurality of the gate electrodes are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the second plurality of the gate electrodes are at the gate potential, and below the second plurality of the gate electrodes within the trenches there are field electrodes which are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the field electrodes are at the source potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A field plate trench transistor comprising
a) a semiconductor body; -
b) a plurality of trenches contained in the semiconductor body, the plurality of trenches being isolated from one another by mesa regions, wherein the plurality of trenches contain i) first and second gate electrodes operable to control a vertical flow of current through the semiconductor body and ii) field electrodes which underlie the gate electrodes and are configured such that when a gate potential and a source potential are applied to the field plate trench transistor, the field electrodes are at the source potential; and wherein the first gate electrodes are insulated from the underlying field electrodes and are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the first gate electrodes are at the gate potential. and the second gate electrodes are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the second gate electrodes are at the source potential, wherein the first and second gate electrodes are electrically insulated from a source contact by means of an insulating layer, and wherein the first and second gate electrodes traverse source regions. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification