RF power transistor having an encapsulated chip package

• US 7,605,451 B2
• Filed: 06/27/2006
• Issued: 10/20/2009
• Est. Priority Date: 06/27/2006
• Status: Active Grant

• Current Assignee: Xenogenic Development Limited Liability Company (Intellectual Ventures LLC)
• Original Assignee: HVVi Semiconductors Incorporated
• Inventors: Moline, Dan
• Primary Examiner(s): Gurley, Lynne A.
• Assistant Examiner(s): Webb, Vernon P
• Application Number:
  US11/475,625
• Publication Number:
  US 20070296077A1
• Time in Patent Office: 1,211 Days
• Field of Search: 257/565, 257/713, 257/728, 257/E23.08, 257/E23.101, 257666-678, 257/E23.043
• US Class Current: 257/666
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching

Abstract

In various embodiments, semiconductor components and methods to manufacture semiconductor components are disclosed. In one embodiment, a method to manufacture semiconductor components includes attaching multiple heat spreaders to a semiconductor wafer. Other embodiments are described and claimed.

Claims

1. A discrete radio frequency (RF) power transistor, comprising:

a semiconductor chip;

a gate terminal coupled to the semiconductor chip, a source terminal coupled to the semiconductor chip, a first drain terminal coupled to the semiconductor chip, and a second drain terminal coupled to the semiconductor chip;

a plastic packaging material encapsulating the semiconductor chip, a portion of the gate terminal, a portion of the source terminal, a portion of the first drain terminal, and a portion of the second drain terminal; and

a wire bond to couple the gate terminal to the semiconductor chip, the wire bond having a substantially perpendicular bond angle with respect to a surface of the semiconductor chip to reduce arcing between the semiconductor chip and the wire bond, or to reduce gate-to-drain capacitance, or combinations thereof

wherein the gate terminal is bent to provide a closer and planar contact to the gate interconnect to couple to the wire bond and wherein at least one or more of the first drain terminal or the second drain terminal, or combinations thereof, are substantially unbent and coplanar with an unbent portion of the gate terminal to allow for surface mounting of the discrete RF power transistor on a planar surface, wherein at least two or more terminals are substantially coplanar.

2. The discrete RF power transistor of claim 1, further comprising a third drain terminal coupled to the semiconductor chip.

3. The discrete RF power transistor of claim 1, wherein the discrete RF power transistor is a surface mount device (SMD).

4. The discrete RF power transistor of claim 1,

wherein the source terminal is a heat spreader;

wherein the heat spreader is rectangular shaped and the semiconductor chip is rectangular shaped; and

wherein a length of the heat spreader is less than a length of the semiconductor chip and a width of the heat spreader is less than a width of the semiconductor chip.

5. The discrete RF power transistor of claim 1, wherein the semiconductor chip comprises a vertical power transistor having a source region and a drain region that are at opposite surfaces of the semiconductor chip and wherein the source terminal is coupled to the source region and the first and second drain terminals are coupled to the drain region.

6. The discrete RF power transistor of claim 1, wherein the source terminal comprises a heat spreader, the heat spreader having one or more tips formed thereon to contact the plastic packing material to at least partially increase pull-out resistance of heat spreader from the plastic packing material.