Atomic layer deposited tantalum containing adhesion layer

• US 7,605,469 B2
• Filed: 06/30/2004
• Issued: 10/20/2009
• Est. Priority Date: 06/30/2004
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Peterson, Brennan L., Johnston, Steven W., Spurgin, Kerry
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US10/883,357
• Publication Number:
  US 20060003581A1
• Time in Patent Office: 1,938 Days
• Field of Search: 438/643, 438/644, 438/654, 438/653, 438/656, 438/648, 257/750, 257/751, 257/753, 257/761, 257/774, 257/E23.145, 257/E23.155
• US Class Current: 257/753
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric

Abstract

Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

Claims

1. An apparatus, comprising:

a conductive material extending through at least one dielectric layer; and

a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen.

2. An apparatus formed by a method comprising:

providing at least one dielectric layer;

forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;

atomic layer depositing a tantalum containing adhesion layer on said at least one side, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen; and

depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.

3. An electronic system comprising:

an external substrate within a housing;

at least one microelectronic device package attached to said external substrate, having at least one contact including;

a conductive material extending through at least one dielectric layer; and

a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen;

an input device interfaced with said external substrate; and

a display device interfaced with said external substrate.

4. An apparatus, comprising:

a conductive material extending through at least one dielectric layer; and

a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen, formed from a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen.

5. An apparatus formed by a method comprising:

providing at least one dielectric layer;

forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;

atomic layer depositing a tantalum containing adhesion layer on said at least one side with a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen; and

depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.

6. An electronic system comprising:

an external substrate within a housing;

at least one microelectronic device package attached to said external substrate, having at least one contact including;

a conductive material extending through at least one dielectric layer; and

a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen, formed from a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen;

an input device interfaced with said external substrate; and

a display device interfaced with said external substrate.