Methods and systems for protection from over-stress
First Claim
Patent Images
1. A circuit, comprising:
- a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state and selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function, the temperature rate sensor comprising;
a temperature sensor configured to provide the temperature of the semiconductor device;
a differentiator configured to provide a differentiated temperature by differentiating the temperature; and
a comparator configured to compare the differentiated temperature to an adjustable reference level representative of the temperature rate function, and to provide a comparator output value therefrom; and
a logic circuit that is coupled to an output node of the comparator, wherein the logic circuit utilizes the comparator output value to provide a logic control signal to switch the semiconductor device from the first state to the second state.
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Abstract
One embodiment of the invention relates to a circuit for over-stress protection. The circuit includes a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state. The circuit is further configured to selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function. Other methods and systems are also disclosed.
16 Citations
15 Claims
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1. A circuit, comprising:
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a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state and selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function, the temperature rate sensor comprising; a temperature sensor configured to provide the temperature of the semiconductor device; a differentiator configured to provide a differentiated temperature by differentiating the temperature; and a comparator configured to compare the differentiated temperature to an adjustable reference level representative of the temperature rate function, and to provide a comparator output value therefrom; and a logic circuit that is coupled to an output node of the comparator, wherein the logic circuit utilizes the comparator output value to provide a logic control signal to switch the semiconductor device from the first state to the second state. - View Dependent Claims (2)
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3. A circuit for protection from over-stress, comprising:
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a temperature rate sensor configured to monitor a temperature of a semiconductor device and selectively provide an output signal based on whether the temperature increases at a rate that has a predetermined relationship with a temperature rate function; an integrator configured to, based on the output signal, selectively integrate the temperature during an integration period;
wherein the semiconductor device is turned off if the integrated temperature measured over the integration period has a predetermined relationship with an integrator reference level. - View Dependent Claims (4, 5, 6, 7)
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8. A method for protecting a semiconductor device from over-stress, comprising:
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monitoring the temperature of a semiconductor device during an on-state; comparing a temperature rate associated with the monitored temperature to a temperature rate function; selectively integrating the temperature of the semiconductor device over a time window, where the selective integration is based on the comparison of the temperature rate to the temperature rate function; and comparing the integrated temperature to an integrator reference level to facilitate switching the device from the on-state to an off-state. - View Dependent Claims (9, 10)
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11. A circuit for protection from over-stress, comprising:
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means for monitoring the temperature of a semiconductor device during an on-state and for comparing a temperature rate associated with the monitored temperature to a temperature rate function; and circuitry to facilitate switching the semiconductor device from a first state to a second state if the temperature rate favorably compares to the temperature rate function; integration means for integrating the temperature of the semiconductor device over a time window; and means for providing an enabling signal that is representative of the time window for which integration is carried out. - View Dependent Claims (12, 13)
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14. A circuit for protection from over-stress, comprising:
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a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period, the temperature rate sensor comprising; a temperature sensor configured to provide the temperature of the semiconductor device; a differentiator configured to aid in designating the start of the integration period; and an integrator configured to integrate the temperature during the integration period; wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function.
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15. A circuit for protection from over-stress, comprising:
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a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period; wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function; and an inductor configured to generate flyback energy when turned from an on-state to an off-state by the semiconductor device; wherein the circuit is configured to provide a diagnostic fault flag if the flyback energy causes the rate of temperature increase to have the predetermined relationship with the temperature rate function.
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Specification