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Heating device for heating semiconductor wafers in thermal processing chambers

  • US 7,608,802 B2
  • Filed: 04/06/2006
  • Issued: 10/27/2009
  • Est. Priority Date: 01/06/1999
  • Status: Expired due to Fees
First Claim
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1. A process for heating semiconductor substrates comprising the steps of:

  • placing a semiconductor substrate in a processing chamber;

    heating the semiconductor substrate in the processing chamber with a first heating device; and

    heating the semiconductor substrate in the processing chamber by a second heating device, the second heating device comprising a laser diode.

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