Scanning lithographic apparatus and device manufacturing method

• US 7,609,362 B2
• Filed: 11/08/2004
• Issued: 10/27/2009
• Est. Priority Date: 11/08/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hoeberichts, Eduard, Gui, Cheng-Qun, De Jager, Pieter Willem Herman, Klinkhamer, Jacob Fredrik Friso
• Primary Examiner(s): Mathews; Alan A
• Application Number:
  US10/983,336
• Publication Number:
  US 20060098175A1
• Time in Patent Office: 1,814 Days
• Field of Search: 355/55, 355/53, 355/67, 355/71, 359/290, 359/291, 359/618, 359/621, 359/622
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70275 Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70358 Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
• CPC Class Codes: G03F 7/70475 Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Abstract

A lithographic apparatus and method for exposing a substrate. An illumination system supplies a series of beams of radiation that are patterned by an array of individually controllable elements. The patterned beams are projected through arrays of lenses onto target portions of a substrate. Each lens in the arrays directs a respective part of the patterned beam towards the substrate. A displacement system causes relative displacement between the substrate and the beam, such that the beams are scanned across the substrate in a predetermined scanning direction. The projection systems are positioned so that each beam is scanned along a respective one of a series of tracks on the substrate. The tracks overlap so that each track comprises a first portion that is scanned by one beam and at least one second portion that overlaps an adjacent track, and is scanned by two beams. A maximum intensity of a first part of each beam directed towards a first portion of the track can be greater than a maximum intensity of a second part of that beam directed towards a second portion of the track, such that the first and second portions of the track are exposed to radiation of substantially the same maximum intensity. Such overlapping of adjacent beams and modulation of the intensity of the beams can allow the optical footprints of different optical columns to be seamed together to enable exposure of large area substrates in a single scan.

Claims

1. A lithographic apparatus, comprising:

optical columns comprising patterning systems and projection systems, wherein,

each of the patterning systems are configured to emit a corresponding patterned beam,

each of the projection systems are configured to project the patterned beams onto corresponding target portions of a substrate, the projection systems comprising an array of lenses, such that each lens in the array directs a respective part of a respective one of the patterned beams towards the substrate; and

a displacement system configured to cause relative displacement between the substrate and the projection systems, such that the patterned beams are scanned across the substrate in a predetermined scanning direction, wherein the projection systems are positioned to allow each patterned—

beam to be scanned along a respective one of a series of overlapping tracks on the substrate, wherein each of the tracks comprises,

a first portion that is scanned by only one of the patterned beams, and

at least one second portion that overlaps an adjacent track to the track and is scanned by two of the patterned beams; and

wherein an intensity of each of the patterned beams is determined based on a misalignment between the patterned beams or a misalignment between the tracks.

2. The apparatus of claim 1, wherein a maximum intensity of a first part of each respective one of the patterned beams directed towards the first portion of a respective one of the tracks is greater than a maximum intensity of a second part of that beam directed towards the second portion of that track, such that the first and second portions of that track are exposed to radiation of substantially the same maximum intensity.

3. The apparatus of claim 1, wherein:

the optical columns are distributed across the substrate in a direction perpendicular to the scanning direction; and

adjacent ones of the optical columns are offset in the scanning direction.

4. The apparatus of claim 1, wherein:

at least two overlapping ones of the patterned beams are directed towards the substrate by respective columns of lenses of a common array of lenses;

the columns are adjacent to the common array;

the columns extend in a direction inclined with respect to the scanning direction; and

the columns are spaced apart in a direction perpendicular to the scanning direction.

5. The apparatus of claim 1, wherein each projection system comprises:

an attenuating device through which a respective one of the patterned beams is transmitted;

wherein at least one peripheral portion of the attenuating device attenuates a proportion of the respective patterned beam; and

wherein the attenuating device is positioned so that the respective patterned beam transmitted through the peripheral portion is projected towards a respective one of the second portions of a respective one of the tracks.

6. The apparatus of claim 5, further comprising an illumination system, wherein the attenuating device is positioned between the illumination system and an optical column, wherein the illumination system is configured to provide illumination that is received by the optical column.

7. The apparatus of claim 5, wherein the attenuating device is positioned between an optical column and the substrate.

8. The apparatus of claim 1, wherein:

each of the patterning systems comprises an array of individually controllable emissive elements, such that individual controllable emissive elements are controlled to direct at least one of a maximum, a minimum, or at least one intermediate intensity component of a respective one of the patterned beams towards the substrate.

9. The apparatus of claim 8, wherein each of the optical columns further comprises:

a control device that controls each of the elements in a respective one of the arrays of individually controllable emissive elements to reduce the intensity of components of the patterned beam directed towards a respective one of the second portions of a respective one of the tracks as compared with components of the patterned beam directed towards a respective one of the first portions of a respective one of the tracks by directing components of the intermediate intensity towards the respective second portion of the respective track and components of the maximum intensity towards the respective first portion of the respective track.

10. The apparatus of claim 1, wherein lenses of the array that direct parts of a patterned beam towards a respective one of the second portions of a respective one of the tracks are arranged to attenuate more of the patterned beam than lenses of the array that direct parts of the patterned beam towards a respective one of the first portion of the respective track.

11. The apparatus of claim 1, wherein the intensity of a second part of a respective one of the patterned beams is reduced progressively from an edge of a respective one of the second portions of a respective one of the tracks that is adjacent to the first part of that track to the other edge of the second portion of that track.

12. A device manufacturing method, comprising:

transmitting patterned beams of radiation with respective optical columns, wherein each optical column comprises an array of individually controllable emissive elements,

projecting the patterned beams onto target portions of a substrate;

causing relative displacement between the substrate and the patterned beams, such that the patterned beams are scanned across the substrate in a predetermined scanning direction;

directing each respective one of the patterned beams towards the substrate through an array of lenses, each lens in the array directing a respective part of the patterned beams;

scanning each respective patterned beam a respective one of a series of tracks on the substrate, wherein each of the tracks comprises a first portion that is scanned by only one of the patterned beams and at least one second portion that overlaps an adjacent one of the tracks and is scanned by two of the patterned beams; and

determining an intensity of each of the patterned beams based on a misalignment between the patterned beams or a misalignment between the tracks.

13. The method of claim 12, further comprising:

directing a maximum intensity of a first part of each of the patterned beams towards a first portion of one of the tracks, which is greater than a maximum intensity of a second part of that beam directed towards a second portion of the track, such that the first and second portions of the track are exposed to radiation of substantially the same maximum intensity.

14. The method of claim 12, further comprising:

distributing the respective optical columns across the substrate in a direction perpendicular to the scanning direction, such that adjacent ones of the optical columns are offset in the scanning direction.

15. The method of claim 12, wherein at least two overlapping ones of the patterned beams are directed towards the substrate by respective ones of columns of lenses of a common array of lenses, the columns being adjacent in the common array, extending in a direction inclined to the scanning direction, and being spaced apart in a direction perpendicular to the scanning direction.

16. The method of claim 12, further comprising:

transmitting each of the patterned beams through an attenuating device, wherein at least one peripheral portion of each of the patterned beams is reduced in intensity by relatively highly attenuating peripheral portions of the attenuating device.

17. The method of claim 16, further comprising positioning the attenuating device between an illumination system and an optical column, wherein the illumination system is configured to provide illumination that is received by the optical column.

18. The method of claim 16, further comprising positioning the attenuating device between an optical column and the substrate.

19. The method of claim 12, wherein the patterning step comprises:

controlling individual emissive elements of one of the array of individually controllable emissive elements to direct components of a respective one of the patterned beams towards either one of the first portions of one of the tracks or one of the second portions of the track; and

controlling the individual emissive elements so that components of at most an intermediate intensity are directed towards the one of the second portions of the track and components of maximum intensity are directed towards the one of the first portions of the track.

20. The method of claim 12, wherein the directing step comprises:

attenuating more of a patterned beam with the lenses of the array that direct parts of the patterned beam towards one of the second portions of one of the tracks than lenses of the array that direct parts of the patterned beam towards one of the first portions of the track.

21. The method of claim 12, further comprising:

progressively reducing an intensity of a second part of a respective one of the patterned beams from an edge of a respective one of the second portions of a respective one of the tracks that is adjacent to a respective one of the first portions of that track to the other edge of a respective one of the second portions of the track.