Manufacture including shield structure

• US 7,609,501 B2
• Filed: 01/19/2008
• Issued: 10/27/2009
• Est. Priority Date: 04/08/1997
• Status: Expired due to Fees

• Current Assignee: X2Y Attenuators, LLC
• Original Assignee: X2Y Attenuators, LLC
• Inventors: Anthony, Anthony A., Anthony, William M.
• Primary Examiner(s): Jackson; Stephen W
• Application Number:
  US12/017,020
• Publication Number:
  US 20080160681A1
• Time in Patent Office: 647 Days
• Field of Search: 361/118
• US Class Current: 361/118
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/16265 the item being a discrete passive component
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01087 Francium [Fr]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H05K 1/023 : using auxiliary mounted passive components or auxiliary substances printed passive components H05K1/16
• CPC Class Codes: H05K 1/0237 : High frequency adaptations H05K1/0216 takes precedence
• CPC Class Codes: H05K 2201/09236 : Parallel layout layout of balanced signal pairs H05K1/0245; superposed layout H05K2201/09672
• CPC Class Codes: H05K 2201/10378 : Interposers
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/49204 : Contact or terminal manufacturing

Abstract

The present invention relates to an interposer substrate for interconnecting between active electronic componentry such as but not limited to a single or multiple integrated circuit chips in either a single or a combination and elements that could comprise of a mounting substrate, substrate module, a printed circuit board, integrated circuit chips or other substrates containing conductive energy pathways that service an energy utilizing load and leading to and from an energy source. The interposer will also possess a multi-layer, universal multi-functional, common conductive shield structure with conductive pathways for energy and EMI conditioning and protection that also comprise a commonly shared and centrally positioned conductive pathway or electrode of the structure that can simultaneously shield and allow smooth energy interaction between grouped and energized conductive pathway electrodes containing a circuit architecture for energy conditioning as it relates to integrated circuit device packaging. The invention can be employed between an active electronic component and a multilayer circuit card. A method for making the interposer is not presented and can be varied to the individual or proprietary construction methodologies that exist or will be developed.

Claims

1. A manufacture, comprising:

a conductive structure, said conductive structure including conductive material forming a first shield structure, wherein said first shield structure includes a first shield structure upper layer;

a first shield structure lower layer below and opposing at least part of said first shield structure upper layer; and

a first conductive pathway between opposing portions of said first shield structure upper layer and said first shield structure lower layer, said first conductive pathway conductively connecting said first shield structure upper layer to said first shield structure lower layer;

a first electrode having a first electrode inner portion between said first shield structure upper layer and said first shield structure lower layer;

a second electrode having a second electrode inner portion between said first shield structure upper layer and said first shield structure lower layer;

wherein said first electrode inner portion and said second electrode inner portion are conductively isolated from said conductive structure; and

wherein said first electrode inner portion and said second electrode inner portion are conductively isolated from one another in said first shield structure.

2. The manufacture of claim 1 wherein said conductive structure further comprises a first shield structure middle layer between said first shield structure upper layer and said first shield structure lower layer, wherein said first shield structure middle layer is conductively connected to said conductive structure.

3. The manufacture of claim 2 wherein said first conductive pathway physically contacts said first shield structure middle layer.

4. The manufacture of claim 2 wherein said first electrode inner portion is below said first shield structure middle layer and said second electrode portion is above said first shield structure middle layer.

5. The manufacture of claim 1 comprising an integrated circuit.

6. The manufacture of claim 5 wherein said integrated circuit comprises silicon.

7. The manufacture of claim 5 wherein first electrode forms part of a first data communication line of said integrated circuit.

8. The manufacture of claim 7 wherein said second electrode forms part of a second data communication line of said integrated circuit.

9. The manufacture of claim 2 comprising an integrated circuit, said integrated circuit incorporating said conductive structure.

10. The manufacture of claim 3 comprising an integrated circuit, said integrated circuit incorporating said conductive structure.

11. The manufacture of claim 4 comprising an integrated circuit, said integrated circuit incorporating said conductive structure.

12. The manufacture of claim 1 wherein said first electrode inner portion defines an aperture through which said first conductive pathway extends.

13. The manufacture of claim 2 wherein said second electrode inner portion defines an aperture through which said first conductive pathway extends.

14. The manufacture of claim 1:

wherein said conductive structure includes structure forming a second shield structure;

wherein said second shield structure includes a second shield structure upper layer, a second shield structure lower layer below and opposing at least part of said second shield structure upper layer; and

a second conductive pathway between opposing portions of said second shield structure upper layer and said second shield structure lower layer;

wherein said second conductive pathway conductively connects said second shield structure upper layer to said second shield structure lower layer;

wherein said second shield structure is stacked above said first shield structure; and

wherein said second shield structure is conductively connected to said first shield structure.

15. The manufacture of claim 14 wherein said second shield structure lower layer and said first shield structure upper layer are formed from the same layer of conductive material.

16. The manufacture of claim 14 wherein said second conductive pathway is aligned with said first conductive pathway.

17. The manufacture of claim 1 further comprising at least one additional conductive pathway that conductively connects said first shield structure upper layer to said first shield structure lower layer.

18. An interposer incorporating the manufacture of claim 1.

19. The manufacture of claim 1 wherein said first conductive pathway extends to a conductive pad.

20. The manufacture of claim 19 further comprising a support structure supporting said conductive pad, and wherein said first conductive pathway is bonded to said conductive pad.

21. The manufacture of claim 1:

wherein said first shield structure upper layer is separated from said first electrode inner portion by a first distance in a direction perpendicular to the plane of said first shield structure upper layer; and

wherein said first shield structure upper layer extends in a dimension in the plane of the first shield structure upper layer beyond the extent of the first electrode inner portion by a distance that is greater than said first distance.

22. The manufacture of claim 5 wherein said integrated circuit incorporates said conductive structure.

23. The manufacture of claim 3 comprising an integrated circuit.

24. The manufacture of claim 23 wherein said integrated circuit incorporates said conductive structure.