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Semiconductor device, manufacturing method and apparatus for the same

  • US 7,611,041 B2
  • Filed: 08/30/2007
  • Issued: 11/03/2009
  • Est. Priority Date: 01/15/2001
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming, on a wiring layer, an under-bump layer including first metal which is to form a first intermetallic compound at an interface through reaction with alloy solder;

    supplying alloy solder having second metal different from main component metal added thereto; and

    forming an alloy layer at an interface between the under-bump layer and the alloy solder by temporary fusing the alloy solder before cooling, wherein the alloy layer is a combination of the first intermetallic compound and a second intermetallic compound of the main component metal of the alloy solder and the second metal.

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