Methods of manufacturing light emitting diodes including barrier layers/sublayers
DCFirst Claim
1. A method of manufacturing a semiconductor light emitting device that includes a semiconductor region that includes therein a device region and a multilayer conductive stack comprising a reflector layer including a reflector layer sidewall on the semiconductor region, and an ohmic contact layer including an ohmic contact layer sidewall, between the reflector layer and the semiconductor region, the method comprising:
- forming a conductive barrier layer directly on the reflector layer that extends directly on the reflector layer sidewall and directly on the ohmic contact layer sidewall.
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Abstract
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
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Citations
13 Claims
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1. A method of manufacturing a semiconductor light emitting device that includes a semiconductor region that includes therein a device region and a multilayer conductive stack comprising a reflector layer including a reflector layer sidewall on the semiconductor region, and an ohmic contact layer including an ohmic contact layer sidewall, between the reflector layer and the semiconductor region, the method comprising:
forming a conductive barrier layer directly on the reflector layer that extends directly on the reflector layer sidewall and directly on the ohmic contact layer sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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