Defectivity and process control of electroless deposition in microelectronics applications

• US 7,611,988 B2
• Filed: 10/05/2005
• Issued: 11/03/2009
• Est. Priority Date: 09/20/2005
• Status: Active Grant

• Current Assignee: MacDermid Enthone Inc. (Element Solutions Inc)
• Original Assignee: Enthone Incorporated (Element Solutions Inc)
• Inventors: Chen, Qingyun, Hurtubise, Richard, Paneccasio, Vincent, Stritch, Daniel, Valverde, Charles, Witt, Christian, Petrov, Nicolai
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): Garcia; Joannie A
• Application Number:
  US11/243,631
• Publication Number:
  US 20070062408A1
• Time in Patent Office: 1,490 Days
• Field of Search: 438/678, 438/761, 438/778, 438/782, 438/FOR.390, 438/FOR.405, 257/635, 257/766, 257/E21.586, 204/157.45, 204/157.5, 204/633
• US Class Current: 438/678
• CPC Class Codes: C09D 5/10 containing metal dust
• CPC Class Codes: C23C 18/34 using reducing agents
• CPC Class Codes: C23C 18/50 with alloys based on iron, cobalt or nickel
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Claims

1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent for reducing said deposition ions onto the substrate, and (c) a stabilizer comprising a molybdenum oxide;

wherein the molybdenum oxide is selected from the group consisting of MoO₃ predissolved with TMAH;

(NH₄)₂MoO₄; and

a combination thereof; and

wherein the stabilizer is present in the electroless deposition composition at a concentration between about 10 ppm and about 800 ppm.

2. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent for reducing said deposition ions onto the substrate, and (c) a stabilizer comprising a molybdenum oxide;

wherein the molybdenum oxide is selected from the group consisting of (NH₄)₂Mo₂O₇;

dimolybdates (Me₂Mo₂O₇.nH₂O);

metamolybdates (Me₂H<sub>10−

m</sub>[H₂(Mo₂O₇)₆].nH₂O); and

combinations thereof;

wherein Me is a counterion selected from among ammonium, tetramethylammonium, and alkali metal cations;

m is less than 10; and

n is an integer having a value corresponding to a stable or metastable form of the hydrated oxide;

wherein the stabilizer is present in the electroless deposition composition at a concentration between about 10 ppm and about 800 ppm.

3. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent for reducing said deposition ions onto the substrate, and (c) a stabilizer comprising a vanadium oxide, wherein the vanadium oxide is pyrovanadates (V₂O₇⁴⁻

).

4. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent for reducing said deposition ions onto the substrate, and (c) a stabilizer comprising a molybdenum oxide;

wherein the molybdenum oxide is a dimolybdate (Me₂Mo₂O₇.nH₂O), wherein Me is ammonium; and

wherein the stabilizer is present in the electroless deposition composition at a concentration between about 10 ppm and about 800 ppm.