Semiconductor light emitting element and method of manufacturing the same

• US 7,611,992 B2
• Filed: 11/19/2007
• Issued: 11/03/2009
• Est. Priority Date: 11/21/2006
• Status: Active Grant

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Tsunoda, Atsuo
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): Taylor, Earl N
• Application Number:
  US11/942,316
• Publication Number:
  US 20080116472A1
• Time in Patent Office: 715 Days
• Field of Search: 438/71, 438/72, 438/33, 438/39, 438/40, 438/42, 438/43, 438/704, 257/E21.229
• US Class Current: 438/704
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting element including a conductive substrate, a bonding metal layer formed on the conductive substrate, a barrier layer formed on the bonding metal layer, a reflective layer formed on the barrier layer, an ohmic electrode layer formed on the reflective layer, a second conductivity type semiconductor layer formed on the ohmic electrode layer, a light emitting layer formed on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer formed on the light emitting layer, wherein outer peripheries of the second conductivity type semiconductor layer, the light emitting layer, and the first conductivity type semiconductor layer are removed, and a method of manufacturing the same are provided.

Claims

1. A method of manufacturing a semiconductor light emitting element comprising a conductive substrate, a bonding metal layer formed on said conductive substrate, a barrier layer formed on said bonding metal layer, a reflective layer formed on said barrier layer, an ohmic electrode layer formed on said reflective layer, a second conductivity type semiconductor layer formed on said ohmic electrode layer, a light emitting layer formed on said second conductivity type semiconductor layer, and a first conductivity type semiconductor layer formed on said light emitting layer, the method comprising:

removing outer peripheries of said second conductivity type semiconductor layer, said light emitting layer, and said first conductivity type semiconductor layer by dry etching; and

immersing in an etchant surfaces exposed by said dry etching of said second conductivity type semiconductor layer, said light emitting layer and said first conductivity type semiconductor layer.

3. The method of manufacturing the semiconductor light emitting element according to claim 1, further comprising:

forming an insulating film on the surfaces of said second conductivity type semiconductor layer, said light emitting layer, and said first conductivity type semiconductor layer after the immersing in said etchant.

4. The method of manufacturing the semiconductor light emitting element according to claim 1, wherein said etchant is formed of a material that can etch at least one type selected from a group consisting of said bonding metal layer, said barrier layer, said reflective layer, and said ohmic electrode layer.

5. The method of manufacturing the semiconductor light emitting element according to claim 4, wherein when said bonding metal layer is made of gold or an alloy containing gold, said etchant is formed of a mixed solution of iodine, potassium iodide, an organic solvent, and water.

6. The method of manufacturing the semiconductor light emitting element according to claim 4, wherein when said barrier layer is made of nickel or an alloy containing nickel, said etchant is formed of hydrochloric acid, sulfuric acid, or a nitric acid aqueous solution.

7. The method of manufacturing the semiconductor light emitting element according to claim 4, wherein when said reflective layer is made of silver or an alloy containing silver, said etchant is formed of a mixed solution of a phosphoric acid aqueous solution, a nitric acid aqueous solution, an acetic acid aqueous solution, and water.

8. The method of manufacturing the semiconductor light emitting element according to claim 4, wherein when said ohmic electrode layer is made of palladium or an alloy containing palladium, said etchant is formed of a mixed solution of hydrochloric acid and water.

2. A method of manufacturing a semiconductor light emitting element comprising a conductive substrate, a bonding metal layer formed on said conductive substrate, a barrier layer formed on said bonding metal layer, a reflective layer formed on said barrier layer, an ohmic electrode layer formed on said reflective layer, a second conductivity type semiconductor layer formed on said ohmic electrode layer, a light emitting layer formed on said second conductivity type semiconductor layer, and a first conductivity type semiconductor layer formed on said light emitting layer, the method comprising:

removing outer peripheries of said second conductivity type semiconductor layer, said light emitting layer, and said first conductivity type semiconductor layer by dry etching; and

performing ultrasonic cleaning after said dry etching when said reflective layer is made of silver or an alloy containing silver.