Light emitting device and method of manufacturing the same
First Claim
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1. A light emitting device comprising:
- a substrate;
a first conductive type lower semiconductor layer on the substrate;
a buffer layer and an undoped nitride layer formed between the substrate and the first conductive type lower semiconductor layer;
a current diffusion layer on the first conductive type lower semiconductor layer;
a first conductive type upper semiconductor layer on the current diffusion layer;
an active layer on the first conductive type upper semiconductor layer; and
a second conductive type semiconductor layer on the active layer.
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Abstract
A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.
18 Citations
5 Claims
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1. A light emitting device comprising:
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a substrate; a first conductive type lower semiconductor layer on the substrate; a buffer layer and an undoped nitride layer formed between the substrate and the first conductive type lower semiconductor layer; a current diffusion layer on the first conductive type lower semiconductor layer; a first conductive type upper semiconductor layer on the current diffusion layer; an active layer on the first conductive type upper semiconductor layer; and a second conductive type semiconductor layer on the active layer. - View Dependent Claims (2, 3, 4, 5)
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Innotek Company Limited (LG Corporation)
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InventorsSon, Hyo Kun
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Primary Examiner(s)Purvis; Sue
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Assistant Examiner(s)Quinto; Kevin
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Application NumberUS11/681,514Publication NumberTime in Patent Office977 DaysField of Search257/79, 257/94, 257/95, 257/98, 257/99, 257/100, 257/101, 257/102, 257/103, 257E33001-E33077, 438/22, 438 26- 35, 438/38, 438/39, 438/40, 438/42, 438/43US Class Current257/79CPC Class CodesH01L 33/14 with a carrier transport co...H01L 33/32 containing nitrogen
